IXFH10N100P Specs and Replacement
Type Designator: IXFH10N100P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 380 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 300 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO247
IXFH10N100P substitution
- MOSFET ⓘ Cross-Reference Search
IXFH10N100P datasheet
ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf
VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETs IXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS... See More ⇒
Detailed specifications: IXFE55N50, IXFE73N30Q, IXFE80N50, IXFF24N100, IXFF80N50Q2, IXFG55N50, IXFH100N25P, IXFH102N15T, AO4407, IXFH10N80P, IXFH110N10P, IXFH110N15T2, IXFH110N25T, IXFH120N15P, IXFH120N20P, IXFH12N100F, IXFH12N100P
Keywords - IXFH10N100P MOSFET specs
IXFH10N100P cross reference
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IXFH10N100P replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: LSE80R350GT | SML40M42BFN | SE4060
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