All MOSFET. 3N163 Datasheet

 

3N163 MOSFET. Datasheet pdf. Equivalent

Type Designator: 3N163

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.375 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 24 nS

Drain-Source Capacitance (Cd): 3 pF

Maximum Drain-Source On-State Resistance (Rds): 250 Ohm

Package: TO72

3N163 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

3N163 Datasheet (PDF)

0.1. 3n163 3n164.pdf Size:18K _linear-systems

3N163
3N163

3N163, 3N164P-CHANNEL ENHANCEMENT MODEMOSFETLinear Integrated SystemsFEATURESVERY HIGH INPUT IMPEDANCEHIGH GATE BREAKDOWNULTRA LOW LEAKAGED SFAST SWITCHING G CaseLOW CAPACITANCE32ABSOLUTE MAXIMUM RATINGS (NOTE 1)1 4@ 25C (unless otherwise noted)SDDrain-Source or Drain-Gate Voltage3N163 -40VG Case3N164 -30VTransient G-S Voltage (NOTE 1) 125VDrai

Datasheet: 2SK997 , 2SK998 , 3N124 , 3N125 , 3N126 , 3N140 , 3N141 , 3N159 , IRFB3306 , 3N164 , 3N169 , 3N170 , 3N171 , 3N175 , 3N176 , 3N177 , 3N187 .

 

 
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