All MOSFET. 3N163 Datasheet

 

3N163 Datasheet and Replacement


   Type Designator: 3N163
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 250 Ohm
   Package: TO72
 

 3N163 substitution

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3N163 Datasheet (PDF)

 ..1. Size:18K  linear-systems
 3n163 3n164.pdf pdf_icon

3N163

3N163, 3N164P-CHANNEL ENHANCEMENT MODEMOSFETLinear Integrated SystemsFEATURESVERY HIGH INPUT IMPEDANCEHIGH GATE BREAKDOWNULTRA LOW LEAKAGED SFAST SWITCHING G CaseLOW CAPACITANCE32ABSOLUTE MAXIMUM RATINGS (NOTE 1)1 4@ 25C (unless otherwise noted)SDDrain-Source or Drain-Gate Voltage3N163 -40VG Case3N164 -30VTransient G-S Voltage (NOTE 1) 125VDrai

Datasheet: 2SK997 , 2SK998 , 3N124 , 3N125 , 3N126 , 3N140 , 3N141 , 3N159 , IRF9540 , 3N164 , 3N169 , 3N170 , 3N171 , 3N175 , 3N176 , 3N177 , 3N187 .

History: IXFH12N90P | SGSP239

Keywords - 3N163 MOSFET datasheet

 3N163 cross reference
 3N163 equivalent finder
 3N163 lookup
 3N163 substitution
 3N163 replacement

 

 
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