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3N163 PDF Specs and Replacement


   Type Designator: 3N163
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 250 Ohm
   Package: TO72
 

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3N163 PDF Specs

 ..1. Size:18K  linear-systems
 3n163 3n164.pdf pdf_icon

3N163

3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE D S FAST SWITCHING G Case LOW CAPACITANCE 3 2 ABSOLUTE MAXIMUM RATINGS (NOTE 1) 1 4 @ 25 C (unless otherwise noted) S D Drain-Source or Drain-Gate Voltage 3N163 -40V G Case 3N164 -30V Transient G-S Voltage (NOTE 1) 125V Drai... See More ⇒

Detailed specifications: 2SK997 , 2SK998 , 3N124 , 3N125 , 3N126 , 3N140 , 3N141 , 3N159 , 2N7000 , 3N164 , 3N169 , 3N170 , 3N171 , 3N175 , 3N176 , 3N177 , 3N187 .

History: QM2401D

Keywords - 3N163 MOSFET specs

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