3N163 MOSFET. Datasheet pdf. Equivalent
Type Designator: 3N163
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.375 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 0.05 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 24 nS
Drain-Source Capacitance (Cd): 3 pF
Maximum Drain-Source On-State Resistance (Rds): 250 Ohm
Package: TO72
3N163 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
3N163 Datasheet (PDF)
0.1. 3n163 3n164.pdf 
Size:18K _linear-systems
3N163, 3N164P-CHANNEL ENHANCEMENT MODEMOSFETLinear Integrated SystemsFEATURESVERY HIGH INPUT IMPEDANCEHIGH GATE BREAKDOWNULTRA LOW LEAKAGED SFAST SWITCHING G CaseLOW CAPACITANCE32ABSOLUTE MAXIMUM RATINGS (NOTE 1)1 4@ 25C (unless otherwise noted)SDDrain-Source or Drain-Gate Voltage3N163 -40VG Case3N164 -30VTransient G-S Voltage (NOTE 1) 125VDrai
Datasheet: 2SK997 , 2SK998 , 3N124 , 3N125 , 3N126 , 3N140 , 3N141 , 3N159 , IRFB3306 , 3N164 , 3N169 , 3N170 , 3N171 , 3N175 , 3N176 , 3N177 , 3N187 .
