IXFH6N120 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXFH6N120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 56 nC
   trⓘ - Rise Time: 300 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO247

IXFH6N120 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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