IXFK120N25 Datasheet. Specs and Replacement

Type Designator: IXFK120N25  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 568 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO264

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IXFK120N25 substitution

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IXFK120N25 datasheet

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 ixfk120n25p ixfx120n25p.pdf pdf_icon

IXFK120N25

VDSS = 250 V IXFK 120N25P PolarHTTM HiPerFET ID25 = 120 A IXFX 120N25P Power MOSFET RDS(on) 24 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 250 V TO-264 (IXFK) VDGR TJ = 25 C to 175 C; RGS = 1 M 250 V VGS Continuous... See More ⇒

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IXFK120N25

This datasheet has been downloaded from http //www.digchip.com at this page ... See More ⇒

 5.2. Size:1919K  ixys
 ixfx120n20 ixfk120n20.pdf pdf_icon

IXFK120N25

HiPerFETTM IXFX 120N20 VDSS = 200 V IXFK 120N20 ID25 = 120 A Power MOSFETs RDS(on) = 17 m Single MOSFET Die trr 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGS Continuous 20 V (TAB) G VGSM Transient 30 V D I... See More ⇒

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Detailed specifications: IXFH86N30T, IXFH88N20Q, IXFH88N30P, IXFH96N15P, IXFH96N20P, IXFH9N80Q, IXFK102N30P, IXFK120N20P, 10N65, IXFK120N25P, IXFK120N30T, IXFK140N20P, IXFK140N25T, IXFK140N30P, IXFK150N15P, IXFK15N100Q, IXFK160N30T

Keywords - IXFK120N25 MOSFET specs

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