All MOSFET. IXFK120N25 Datasheet

 

IXFK120N25 Datasheet and Replacement


   Type Designator: IXFK120N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 568 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO264
 

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IXFK120N25 Datasheet (PDF)

 0.1. Size:123K  ixys
 ixfk120n25p ixfx120n25p.pdf pdf_icon

IXFK120N25

VDSS = 250 VIXFK 120N25PPolarHTTM HiPerFETID25 = 120 AIXFX 120N25PPower MOSFET RDS(on) 24 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 250 VTO-264 (IXFK)VDGR TJ = 25C to 175C; RGS = 1 M 250 VVGS Continuous

 5.1. Size:395K  ixys
 ixfk110n20 ixfk120n20 ixfn110n20 ixfn120n20.pdf pdf_icon

IXFK120N25

This datasheet has been downloaded from http://www.digchip.com at this page

 5.2. Size:1919K  ixys
 ixfx120n20 ixfk120n20.pdf pdf_icon

IXFK120N25

HiPerFETTM IXFX 120N20 VDSS = 200 VIXFK 120N20 ID25 = 120 APower MOSFETsRDS(on) = 17 mSingle MOSFET Die trr 250 ns Preliminary data sheetSymbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VVGS Continuous 20 V (TAB)GVGSM Transient 30 VDI

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Datasheet: IXFH86N30T , IXFH88N20Q , IXFH88N30P , IXFH96N15P , IXFH96N20P , IXFH9N80Q , IXFK102N30P , IXFK120N20P , P0903BDG , IXFK120N25P , IXFK120N30T , IXFK140N20P , IXFK140N25T , IXFK140N30P , IXFK150N15P , IXFK15N100Q , IXFK160N30T .

History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452

Keywords - IXFK120N25 MOSFET datasheet

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