IXFK15N100Q Datasheet. Specs and Replacement
Type Designator: IXFK15N100Q 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO264
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IXFK15N100Q substitution
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IXFK15N100Q datasheet
ixfh150n15p ixfk150n15p.pdf
IXFH 150N15P PolarHTTM HiPerFET VDSS = 150 V IXFK 150N15P Power MOSFET ID25 = 150 A RDS(on) 13 m N-Channel Enhancement Mode Fast Intrinsic Diode trr 200 ns Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VGS Contin... See More ⇒
ixfk150n30p3 ixfx150n30p3.pdf
Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFK150N30P3 Power MOSFETs ID25 = 150A IXFX150N30P3 RDS(on) 19m trr 250ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 300 V Tab VDGR TJ = 25 C to 150 ... See More ⇒
ixfk150n15 ixfx150n15.pdf
HiPerFETTM IXFK 150N15 VDSS = 150 V IXFX 150N15 ID25 = 150 A Power MOSFETs RDS(on) = 12.5 mW Single MOSFET Die trr 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 150 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 150 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET chip capability) 150... See More ⇒
Detailed specifications: IXFK120N20P, IXFK120N25, IXFK120N25P, IXFK120N30T, IXFK140N20P, IXFK140N25T, IXFK140N30P, IXFK150N15P, STP65NF06, IXFK160N30T, IXFK16N90Q, IXFK170N10P, IXFK170N20P, IXFK170N20T, IXFK180N15P, IXFK180N25T, IXFK200N10P
Keywords - IXFK15N100Q MOSFET specs
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