IXFK15N100Q Datasheet and Replacement
Type Designator: IXFK15N100Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 250 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO264
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IXFK15N100Q Datasheet (PDF)
ixfh150n15p ixfk150n15p.pdf

IXFH 150N15PPolarHTTM HiPerFETVDSS = 150 VIXFK 150N15PPower MOSFETID25 = 150 A RDS(on) 13 m N-Channel Enhancement Mode Fast Intrinsic Diodetrr 200 nsAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VVGS Contin
ixfk150n30p3 ixfx150n30p3.pdf

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VIXFK150N30P3Power MOSFETs ID25 = 150AIXFX150N30P3 RDS(on) 19m trr 250nsN-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeGDSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 300 V TabVDGR TJ = 25C to 150
ixfk150n15 ixfx150n15.pdf

HiPerFETTM IXFK 150N15 VDSS = 150 VIXFX 150N15 ID25 = 150 APower MOSFETsRDS(on) = 12.5 mWSingle MOSFET Dietrr 250 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 150 VVDGR TJ = 25C to 150C; RGS = 1 MW 150 VD (TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C (MOSFET chip capability) 150
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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History: TK2P60D | IRFBG20



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