IXFK170N20P Datasheet. Specs and Replacement
Type Designator: IXFK170N20P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 170 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 200 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO264
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IXFK170N20P substitution
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IXFK170N20P datasheet
ixfx170n20t ixfk170n20t.pdf
Advance Technical Information GigaMOSTM VDSS = 200V IXFK170N20T ID25 = 170A Power MOSFET IXFX170N20T RDS(on) 11m trr 200ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 200 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS = ... See More ⇒
ixfk170n10 ixfn170n10.pdf
VDSS ID25 RDS(on) trr HiPerFETTM IXFN170N10 100V 170A 10mW 200ns Power MOSFET IXFK170N10 100V 170A 10mW 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 G D (TAB) VDSS TJ = 25 C to 150 C 100 100 V D S VDGR TJ = 25 C to 150 C 100 100 V VGS Continuous 20 20 V VGSM Transient 30 30 V miniBLOC, SO... See More ⇒
ixfh170n10p ixfk170n10p.pdf
PolarTM HiperFETTM VDSS = 100V IXFH170N10P ID25 = 170A Power MOSFET IXFK170N10P RDS(on) 9m trr 150ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 175 C 100 V Tab S VDGR TJ = 25 C to 175 C, RGS = 1M 100 V VGSS Conti... See More ⇒
Detailed specifications: IXFK140N20P, IXFK140N25T, IXFK140N30P, IXFK150N15P, IXFK15N100Q, IXFK160N30T, IXFK16N90Q, IXFK170N10P, HY1906P, IXFK170N20T, IXFK180N15P, IXFK180N25T, IXFK200N10P, IXFK20N120, IXFK20N120P, IXFK21N100F, IXFK21N100Q
Keywords - IXFK170N20P MOSFET specs
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