All MOSFET. IXFK170N20P Datasheet

 

IXFK170N20P Datasheet and Replacement


   Type Designator: IXFK170N20P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 170 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO264
 

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IXFK170N20P Datasheet (PDF)

 4.1. Size:123K  ixys
 ixfx170n20t ixfk170n20t.pdf pdf_icon

IXFK170N20P

Advance Technical InformationGigaMOSTM VDSS = 200VIXFK170N20TID25 = 170APower MOSFETIXFX170N20T RDS(on) 11m trr 200nsN-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 200 VD(TAB)SVDGR TJ = 25C to 175C, RGS =

 6.1. Size:144K  ixys
 ixfk170n10 ixfn170n10.pdf pdf_icon

IXFK170N20P

VDSS ID25 RDS(on) trrHiPerFETTMIXFN170N10 100V 170A 10mW 200nsPower MOSFETIXFK170N10 100V 170A 10mW 200nsSingle MOSFET DieTO-264 AA (IXFK)Preliminary dataSymbol Test Conditions Maximum Ratings IXFK IXFN170N10 170N10GD (TAB)VDSS TJ = 25C to 150C 100 100 VDSVDGR TJ = 25C to 150C 100 100 VVGS Continuous 20 20 VVGSM Transient 30 30 VminiBLOC, SO

 6.2. Size:142K  ixys
 ixfh170n10p ixfk170n10p.pdf pdf_icon

IXFK170N20P

PolarTM HiperFETTM VDSS = 100VIXFH170N10PID25 = 170APower MOSFETIXFK170N10P RDS(on) 9m trr 150nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-247 (IXFH)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 175C 100 V TabSVDGR TJ = 25C to 175C, RGS = 1M 100 VVGSS Conti

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Datasheet: IXFK140N20P , IXFK140N25T , IXFK140N30P , IXFK150N15P , IXFK15N100Q , IXFK160N30T , IXFK16N90Q , IXFK170N10P , IRF2807 , IXFK170N20T , IXFK180N15P , IXFK180N25T , IXFK200N10P , IXFK20N120 , IXFK20N120P , IXFK21N100F , IXFK21N100Q .

Keywords - IXFK170N20P MOSFET datasheet

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