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3N187 PDF Specs and Replacement


   Type Designator: 3N187
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 150 Ohm
   Package: TO72
 

 3N187 substitution

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3N187 PDF Specs

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3N187

3N187 MOS FIELD-EFFECT TRANSISTOR DESCRIPTION The ASI 3N187 is an N-Channel Dual-Gate Depletion Type Transistor With Monolithic Gate Protection PACKAGE STYLE TO-72 Diodes, used in RF,IF Amplifier and Mixer Applications up to 300 MHz. MAXIMUM RATINGS I 50 mA V 20 V PDISS 330 mW @ TA = 25 OC TJ -65 OC to +175 OC 1 = Drain 2 = Gate #2 3 = Gate #1 4 = Source, Case, and Substrate T... See More ⇒

Detailed specifications: 3N163 , 3N164 , 3N169 , 3N170 , 3N171 , 3N175 , 3N176 , 3N177 , 2SK3878 , 3N190 , 3N191 , 3N200 , 3N201 , 3N202 , 3N203 , 3N203A , 3N204 .

History: 3N202

Keywords - 3N187 MOSFET specs

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