3N187 MOSFET. Datasheet pdf. Equivalent
Type Designator: 3N187
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.33 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 0.05 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 150 Ohm
Package: TO72
3N187 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
3N187 Datasheet (PDF)
0.1. 3n187.pdf 
Size:15K _advanced-semi
3N187 MOS FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI 3N187 is an N-Channel Dual-Gate Depletion Type Transistor With Monolithic Gate Protection PACKAGE STYLE TO-72 Diodes, used in RF,IF Amplifier and Mixer Applications up to 300 MHz. MAXIMUM RATINGS I 50 mA V 20 V PDISS 330 mW @ TA = 25 OC TJ -65 OC to +175 OC 1 = Drain 2 = Gate #2 3 = Gate #1 4 = Source, Case, and Substrate T
Datasheet: 3N163 , 3N164 , 3N169 , 3N170 , 3N171 , 3N175 , 3N176 , 3N177 , IRFP064N , 3N190 , 3N191 , 3N200 , 3N201 , 3N202 , 3N203 , 3N203A , 3N204 .
