3N187 MOSFET. Datasheet pdf. Equivalent
Type Designator: 3N187
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.05 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 150 Ohm
Package: TO72
3N187 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
3N187 Datasheet (PDF)
3n187.pdf
3N187MOS FIELD-EFFECT TRANSISTORDESCRIPTION:The ASI 3N187 is an N-ChannelDual-Gate Depletion Type TransistorWith Monolithic Gate ProtectionPACKAGE STYLE TO-72Diodes, used in RF,IF Amplifier andMixer Applications up to 300 MHz.MAXIMUM RATINGSI 50 mAV 20 VPDISS 330 mW @ TA = 25 OCTJ -65 OC to +175 OC1 = Drain 2 = Gate #2 3 = Gate #1 4 = Source, Case, and SubstrateT
Datasheet: 3N163 , 3N164 , 3N169 , 3N170 , 3N171 , 3N175 , 3N176 , 3N177 , IRF1407 , 3N190 , 3N191 , 3N200 , 3N201 , 3N202 , 3N203 , 3N203A , 3N204 .
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