3N187 PDF Specs and Replacement
Type Designator: 3N187
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 150 Ohm
Package: TO72
3N187 substitution
3N187 PDF Specs
3n187.pdf
3N187 MOS FIELD-EFFECT TRANSISTOR DESCRIPTION The ASI 3N187 is an N-Channel Dual-Gate Depletion Type Transistor With Monolithic Gate Protection PACKAGE STYLE TO-72 Diodes, used in RF,IF Amplifier and Mixer Applications up to 300 MHz. MAXIMUM RATINGS I 50 mA V 20 V PDISS 330 mW @ TA = 25 OC TJ -65 OC to +175 OC 1 = Drain 2 = Gate #2 3 = Gate #1 4 = Source, Case, and Substrate T... See More ⇒
Detailed specifications: 3N163 , 3N164 , 3N169 , 3N170 , 3N171 , 3N175 , 3N176 , 3N177 , 2SK3878 , 3N190 , 3N191 , 3N200 , 3N201 , 3N202 , 3N203 , 3N203A , 3N204 .
History: 3N202
Keywords - 3N187 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 3N202
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MOSFET: AP50N04Q | AP50N04K | AP50N04GD
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