IXFL100N50P PDF and Equivalents Search

 

IXFL100N50P Specs and Replacement

Type Designator: IXFL100N50P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: ISOPLUS264

IXFL100N50P substitution

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IXFL100N50P datasheet

 ..1. Size:205K  ixys
 ixfl100n50p.pdf pdf_icon

IXFL100N50P

IXFL 100N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 70 A Power MOSFET RDS(on) 52 m ISOPLUS264TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 1... See More ⇒

 9.1. Size:144K  ixys
 ixfl132n50p3.pdf pdf_icon

IXFL100N50P

Advance Technical Information Polar3TM HiPerFETTM VDSS = 500V IXFL132N50P3 Power MOSFET ID25 = 63A RDS(on) 43m (Electrically Isolated Tab) trr 250ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS264 Fast Intrinsic Rectifier Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 15... See More ⇒

Detailed specifications: IXFK80N15Q, IXFK80N50P, IXFK80N50Q3, IXFK80N60P3, IXFK88N20Q, IXFK88N30P, IXFK94N50P2, IXFK98N50P3, 4435, IXFL30N120P, IXFL32N120P, IXFL34N100, IXFL36N110P, IXFL38N100P, IXFL38N100Q2, IXFL39N90, IXFL40N110P

Keywords - IXFL100N50P MOSFET specs

 IXFL100N50P cross reference

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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