All MOSFET. IXFL32N120P Datasheet

 

IXFL32N120P Datasheet and Replacement


   Type Designator: IXFL32N120P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: ISOPLUS I5PAK
 

 IXFL32N120P substitution

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IXFL32N120P Datasheet (PDF)

 9.1. Size:116K  ixys
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IXFL32N120P

IXFL 34N100 VDSS = 1000 VIXFL 34N100 VDSS = 1000 VIXFL 34N100 VDSS = 1000 VIXFL 34N100 VDSS = 1000 VIXFL 34N100 VDSS = 1000 VHiPerFETTM Power MOSFETsHiPerFETTM Power MOSFETsHiPerFETTM Power MOSFETsHiPerFETTM Power MOSFETsHiPerFETTM Power MOSFETsID25 = 30 AID25 = 30 AISOPLUS264TM ID25 = 30 AISOPLUS264TM ID25 = 30 AISOPLUS264TM ID25 = 30 AISOPLUS264TMISOPLUS264TM

Datasheet: IXFK80N50Q3 , IXFK80N60P3 , IXFK88N20Q , IXFK88N30P , IXFK94N50P2 , IXFK98N50P3 , IXFL100N50P , IXFL30N120P , IRF9540N , IXFL34N100 , IXFL36N110P , IXFL38N100P , IXFL38N100Q2 , IXFL39N90 , IXFL40N110P , IXFL44N100P , IXFL44N60 .

History: BLS70R420-B | IXTK150N15P | DMJ70H600SH3 | OSG65R260FSF | AP50T10GP-HF | OSG60R200PSZF | BSC040N08NS5

Keywords - IXFL32N120P MOSFET datasheet

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