IXFL32N120P Datasheet. Specs and Replacement

Type Designator: IXFL32N120P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm

Package: ISOPLUS I5PAK

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IXFL32N120P datasheet

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IXFL32N120P

IXFL 34N100 VDSS = 1000 V IXFL 34N100 VDSS = 1000 V IXFL 34N100 VDSS = 1000 V IXFL 34N100 VDSS = 1000 V IXFL 34N100 VDSS = 1000 V HiPerFETTM Power MOSFETs HiPerFETTM Power MOSFETs HiPerFETTM Power MOSFETs HiPerFETTM Power MOSFETs HiPerFETTM Power MOSFETs ID25 = 30 A ID25 = 30 A ISOPLUS264TM ID25 = 30 A ISOPLUS264TM ID25 = 30 A ISOPLUS264TM ID25 = 30 A ISOPLUS264TM ISOPLUS264TM ... See More ⇒

Detailed specifications: IXFK80N50Q3, IXFK80N60P3, IXFK88N20Q, IXFK88N30P, IXFK94N50P2, IXFK98N50P3, IXFL100N50P, IXFL30N120P, IRLB4132, IXFL34N100, IXFL36N110P, IXFL38N100P, IXFL38N100Q2, IXFL39N90, IXFL40N110P, IXFL44N100P, IXFL44N60

Keywords - IXFL32N120P MOSFET specs

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