All MOSFET. IXFL38N100Q2 Datasheet

 

IXFL38N100Q2 Datasheet and Replacement


   Type Designator: IXFL38N100Q2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 380 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: ISOPLUS264
 

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IXFL38N100Q2 Datasheet (PDF)

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IXFL38N100Q2

IXFL 34N100 VDSS = 1000 VIXFL 34N100 VDSS = 1000 VIXFL 34N100 VDSS = 1000 VIXFL 34N100 VDSS = 1000 VIXFL 34N100 VDSS = 1000 VHiPerFETTM Power MOSFETsHiPerFETTM Power MOSFETsHiPerFETTM Power MOSFETsHiPerFETTM Power MOSFETsHiPerFETTM Power MOSFETsID25 = 30 AID25 = 30 AISOPLUS264TM ID25 = 30 AISOPLUS264TM ID25 = 30 AISOPLUS264TM ID25 = 30 AISOPLUS264TMISOPLUS264TM

Datasheet: IXFK94N50P2 , IXFK98N50P3 , IXFL100N50P , IXFL30N120P , IXFL32N120P , IXFL34N100 , IXFL36N110P , IXFL38N100P , 4N60 , IXFL39N90 , IXFL40N110P , IXFL44N100P , IXFL44N60 , IXFL44N80 , IXFL60N60 , IXFL60N80P , IXFL70N60Q2 .

History: DH020N03F | IPB34CN10N | FQD2N50TF | ELM13403CA | IRF614PBF | P2610BT | DMN3035LWN

Keywords - IXFL38N100Q2 MOSFET datasheet

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