IXFL39N90 Datasheet. Specs and Replacement

Type Designator: IXFL39N90  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 694 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 39 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: ISOPLUS264

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IXFL39N90 datasheet

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IXFL39N90

IXFL 34N100 VDSS = 1000 V IXFL 34N100 VDSS = 1000 V IXFL 34N100 VDSS = 1000 V IXFL 34N100 VDSS = 1000 V IXFL 34N100 VDSS = 1000 V HiPerFETTM Power MOSFETs HiPerFETTM Power MOSFETs HiPerFETTM Power MOSFETs HiPerFETTM Power MOSFETs HiPerFETTM Power MOSFETs ID25 = 30 A ID25 = 30 A ISOPLUS264TM ID25 = 30 A ISOPLUS264TM ID25 = 30 A ISOPLUS264TM ID25 = 30 A ISOPLUS264TM ISOPLUS264TM ... See More ⇒

Detailed specifications: IXFK98N50P3, IXFL100N50P, IXFL30N120P, IXFL32N120P, IXFL34N100, IXFL36N110P, IXFL38N100P, IXFL38N100Q2, 20N50, IXFL40N110P, IXFL44N100P, IXFL44N60, IXFL44N80, IXFL60N60, IXFL60N80P, IXFL70N60Q2, IXFL80N50Q2

Keywords - IXFL39N90 MOSFET specs

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