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IXFL60N80P Spec and Replacement


   Type Designator: IXFL60N80P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: ISOPLUS264

 IXFL60N80P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFL60N80P Specs

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IXFL60N80P

IXFL 60N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 40 A Power MOSFET RDS(on) 150 m ISOPLUS264TM trr 250 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM (IXFL) ISOPLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR T... See More ⇒

Detailed specifications: IXFL38N100P , IXFL38N100Q2 , IXFL39N90 , IXFL40N110P , IXFL44N100P , IXFL44N60 , IXFL44N80 , IXFL60N60 , NCEP15T14 , IXFL70N60Q2 , IXFL80N50Q2 , IXFL82N60P , IXFN100N10S1 , IXFN100N10S2 , IXFN100N10S3 , IXFN100N20 , IXFN100N50P .

Keywords - IXFL60N80P MOSFET specs

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