IXFL60N80P Datasheet. Specs and Replacement

Type Designator: IXFL60N80P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: ISOPLUS264

IXFL60N80P substitution

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IXFL60N80P datasheet

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IXFL60N80P

IXFL 60N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 40 A Power MOSFET RDS(on) 150 m ISOPLUS264TM trr 250 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM (IXFL) ISOPLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR T... See More ⇒

Detailed specifications: IXFL38N100P, IXFL38N100Q2, IXFL39N90, IXFL40N110P, IXFL44N100P, IXFL44N60, IXFL44N80, IXFL60N60, NCEP15T14, IXFL70N60Q2, IXFL80N50Q2, IXFL82N60P, IXFN100N10S1, IXFN100N10S2, IXFN100N10S3, IXFN100N20, IXFN100N50P

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.