IXFL80N50Q2 Datasheet. Specs and Replacement
Type Designator: IXFL80N50Q2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 380 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
Package: ISOPLUS264
IXFL80N50Q2 substitution
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IXFL80N50Q2 datasheet
ixfl82n60p.pdf
IXFL 82N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 82 A Power MOSFET RDS(on) 78 m ISOPLUS264TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM ISOPLUS264 (IXFL) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25... See More ⇒
Detailed specifications: IXFL39N90, IXFL40N110P, IXFL44N100P, IXFL44N60, IXFL44N80, IXFL60N60, IXFL60N80P, IXFL70N60Q2, STP80NF70, IXFL82N60P, IXFN100N10S1, IXFN100N10S2, IXFN100N10S3, IXFN100N20, IXFN100N50P, IXFN100N50Q3, IXFN102N30P
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