3N209 MOSFET. Datasheet pdf. Equivalent
Type Designator: 3N209
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.1 V
|Id|ⓘ - Maximum Drain Current: 0.03 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Cossⓘ - Output Capacitance: 2 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
Package: TO72
3N209 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
3N209 Datasheet (PDF)
3n210 3n209.pdf
3N209-3N210DUAL GATE MOSFET VHF AMPLIFIERHigh-reliability discrete productsand engineering services since 1977FEATURES Available as HR (high reliability) screened per MIL-PRF-19500, JANTX level. Add HR suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding -PBF suffix.MAXIMUM RATINGSRating Symbol Value UnitDra
Datasheet: 3N200 , 3N201 , 3N202 , 3N203 , 3N203A , 3N204 , 3N205 , 3N206 , AON7506 , 3N210 , 3N211 , 3N212 , 3N213 , 3N242 , 3N323 , 3N324 , 3N325 .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918