IXFN72N55Q2
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFN72N55Q2
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 890
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 72
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 258
nC
trⓘ - Rise Time: 250
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072
Ohm
Package:
SOT227B
IXFN72N55Q2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFN72N55Q2
Datasheet (PDF)
..1. Size:560K ixys
ixfn72n55q2.pdf 
HiPerFETTMVDSS = 550 VIXFN 72N55Q2Power MOSFETID25 = 72 ARDS(on)= 72 mN-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic RgHigh dV/dt, Low trrPreliminary Data SheetminiBLOC, SOT-227 B (IXFN)E153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 550 VVDGR TJ = 25C to 150
9.1. Size:566K ixys
ixfn70n60q2.pdf
HiPerFETTMVDSS = 600 VIXFN 70N60Q2Power MOSFETID25 = 70 ARDS(on)= 80 mN-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic RgHigh dV/dt, Low trrPreliminary Data SheetminiBLOC, SOT-227 B (IXFN)E153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150
9.2. Size:131K ixys
ixfk73n30 ixfn73n30.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFK 73 N 30 300 V 73 A 45 mPower MOSFETsIXFN 73 N 30 300 V 73 A 45 mtrr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AA (IXFK)TO-264 AA (IXFK)TO-264 AA (IXFK)TO-264 AA (IXFK)TO-264 AA (IXFK)Symbol Test Conditions Maximum RatingsIXFK IXFN
Datasheet: IXFN60N80P
, IXFN62N80Q3
, IXFN64N50P
, IXFN64N50PD2
, IXFN64N50PD3
, IXFN64N60P
, IXFN66N50Q2
, IXFN70N60Q2
, IRFP250N
, IXFN73N30Q
, IXFN80N48
, IXFN80N50P
, IXFN80N50Q2
, IXFN80N50Q3
, IXFN80N60P3
, IXFN82N60P
, IXFN82N60Q3
.
