IXFN72N55Q2 Datasheet. Specs and Replacement

Type Designator: IXFN72N55Q2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 890 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 72 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: SOT227B

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IXFN72N55Q2 datasheet

 ..1. Size:560K  ixys
 ixfn72n55q2.pdf pdf_icon

IXFN72N55Q2

HiPerFETTM VDSS = 550 V IXFN 72N55Q2 Power MOSFET ID25 = 72 A RDS(on)= 72 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 550 V VDGR TJ = 25 C to 150... See More ⇒

 9.1. Size:566K  ixys
 ixfn70n60q2.pdf pdf_icon

IXFN72N55Q2

HiPerFETTM VDSS = 600 V IXFN 70N60Q2 Power MOSFET ID25 = 70 A RDS(on)= 80 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150... See More ⇒

 9.2. Size:131K  ixys
 ixfk73n30 ixfn73n30.pdf pdf_icon

IXFN72N55Q2

VDSS ID25 RDS(on) HiPerFETTM IXFK 73 N 30 300 V 73 A 45 m Power MOSFETs IXFN 73 N 30 300 V 73 A 45 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr TO-264 AA (IXFK) TO-264 AA (IXFK) TO-264 AA (IXFK) TO-264 AA (IXFK) TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN ... See More ⇒

Detailed specifications: IXFN60N80P, IXFN62N80Q3, IXFN64N50P, IXFN64N50PD2, IXFN64N50PD3, IXFN64N60P, IXFN66N50Q2, IXFN70N60Q2, IRFP250N, IXFN73N30Q, IXFN80N48, IXFN80N50P, IXFN80N50Q2, IXFN80N50Q3, IXFN80N60P3, IXFN82N60P, IXFN82N60Q3

Keywords - IXFN72N55Q2 MOSFET specs

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