IXFP4N100PM MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXFP4N100PM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 300 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm
   Package: TO220

IXFP4N100PM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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