All MOSFET. IXFP5N100P Datasheet

 

IXFP5N100P Datasheet and Replacement


   Type Designator: IXFP5N100P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO220
 

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IXFP5N100P Datasheet (PDF)

 0.1. Size:115K  ixys
 ixfp5n100pm.pdf pdf_icon

IXFP5N100P

Advance Technical InformationVDSS = 1000VPolarTM HiPerFETTMIXFP5N100PMID25 = 2.3APower MOSFET RDS(on) 2.8 (Electrically Isolated Tab)N-Channel Enhancement ModeOVERMOLDEDAvalanche Rated(IXFP...M) OUTLINESymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VGVDGR TJ = 25C to 150C, RGS = 1M 1000 VIsolated Tab

 8.1. Size:164K  ixys
 ixfa5n50p3 ixfp5n50p3 ixfy5n50p3.pdf pdf_icon

IXFP5N100P

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 500VIXFY5N50P3Power MOSFETs ID25 = 5AIXFA5N50P3 RDS(on) 1.65 IXFP5N50P3N-Channel Enhancement ModeAvalanche RatedTO-252 (IXFY)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V TO-263 AA (IXFA)VDGR TJ = 25C to 150C, R

 9.1. Size:313K  ixys
 ixfa56n30x3 ixfp56n30x3 ixfh56n30x3.pdf pdf_icon

IXFP5N100P

Preliminary Technical InformationX3-Class HiPerFETTM VDSS = 300VIXFA56N30X3Power MOSFET ID25 = 56AIXFP56N30X3 RDS(on) 27m IXFH56N30X3N-Channel Enhancement ModeTO-263 (IXFA)Avalanche RatedGSD (Tab)TO-220 (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M 300

Datasheet: IXFP230N075T2 , IXFP3N120 , IXFP3N50PM , IXFP3N80 , IXFP4N100P , IXFP4N100PM , IXFP4N100Q , IXFP4N100QM , P60NF06 , IXFP5N50PM , IXFP6N120P , IXFP76N15T2 , IXFP7N100P , IXFP7N80P , IXFP7N80PM , IXFP8N50PM , IXFQ10N80P .

History: NTD20P06L

Keywords - IXFP5N100P MOSFET datasheet

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