IXFP5N100P MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFP5N100P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 6 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 33.4 nC
Rise Time (tr): 200 nS
Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm
Package: TO220
IXFP5N100P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFP5N100P Datasheet (PDF)
1.1. ixfp5n100pm.pdf 
Size:115K _ixys
Advance Technical Information VDSS = 1000V PolarTM HiPerFETTM IXFP5N100PM ID25 = 2.3A Power MOSFET ≤ Ω RDS(on) ≤ Ω ≤ 2.8Ω ≤ Ω ≤ Ω (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED Avalanche Rated (IXFP...M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V G VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V Isolated Tab
4.1. ixfa5n50p3 ixfp5n50p3 ixfy5n50p3.pdf Size:164K _ixys
Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFY5N50P3 Power MOSFETs ID25 = 5A IXFA5N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 1.65Ω ≤ Ω ≤ Ω IXFP5N50P3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V TO-263 AA (IXFA) VDGR TJ = 25°C to 150°C, R
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