All MOSFET. IXFP5N100P Datasheet

 

IXFP5N100P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFP5N100P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 6 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 33.4 nC

Rise Time (tr): 200 nS

Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm

Package: TO220

IXFP5N100P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXFP5N100P Datasheet (PDF)

1.1. ixfp5n100pm.pdf Size:115K _ixys

IXFP5N100P IXFP5N100P

Advance Technical Information VDSS = 1000V PolarTM HiPerFETTM IXFP5N100PM ID25 = 2.3A Power MOSFET ≤ Ω RDS(on) ≤ Ω ≤ 2.8Ω ≤ Ω ≤ Ω (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED Avalanche Rated (IXFP...M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V G VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V Isolated Tab

4.1. ixfa5n50p3 ixfp5n50p3 ixfy5n50p3.pdf Size:164K _ixys

IXFP5N100P IXFP5N100P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFY5N50P3 Power MOSFETs ID25 = 5A IXFA5N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 1.65Ω ≤ Ω ≤ Ω IXFP5N50P3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V TO-263 AA (IXFA) VDGR TJ = 25°C to 150°C, R

 

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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