IXFP5N100P - параметры транзистора MOSFET, его аналоги, datasheet

IXFP5N100P Datasheet (PDF)

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Advance Technical InformationVDSS = 1000VPolarTM HiPerFETTMIXFP5N100PMID25 = 2.3APower MOSFET RDS(on) 2.8 (Electrically Isolated Tab)N-Channel Enhancement ModeOVERMOLDEDAvalanche Rated(IXFP...M) OUTLINESymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VGVDGR TJ = 25C to 150C, RGS = 1M 1000 VIsolated Tab

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Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 500VIXFY5N50P3Power MOSFETs ID25 = 5AIXFA5N50P3 RDS(on) 1.65 IXFP5N50P3N-Channel Enhancement ModeAvalanche RatedTO-252 (IXFY)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V TO-263 AA (IXFA)VDGR TJ = 25C to 150C, R

9.1. Size:313K ixys
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Preliminary Technical InformationX3-Class HiPerFETTM VDSS = 300VIXFA56N30X3Power MOSFET ID25 = 56AIXFP56N30X3 RDS(on) 27m IXFH56N30X3N-Channel Enhancement ModeTO-263 (IXFA)Avalanche RatedGSD (Tab)TO-220 (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M 300

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