IXFR44N80P MOSFET Datasheet: N-Ch, 800V, 26A. Full specification with pinout and replacement list

IXFR44N80P Specs and Replacement

   Type Designator: IXFR44N80P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: ISOPLUS247

IXFR44N80P substitution

- MOSFET ⓘ Cross-Reference Search

IXFR44N80P datasheet

..1. Size:101K ixys
ixfr44n80p.pdf pdf_icon

IXFR 44N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 25 A Power MOSFET RDS(on) 200 m Electrically Isolated Tab trr 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 8... See More ⇒

7.1. Size:34K ixys
ixfr44n60.pdf pdf_icon

HiPerFETTM Power MOSFETs IXFR 44N60 VDSS = 600 V ISOPLUS247TM ID25 = 38 A (Electrically Isolated Back Surface) RDS(on)= 130 mW Single MOSFET Die trr 250 ns ISOPLUS 247TM Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C38 A G = Gate D = Drain ... See More ⇒

7.2. Size:156K ixys
ixfr44n50q3.pdf pdf_icon

Advance Technical Information HiperFETTM VDSS = 500V IXFR44N50Q3 P wer MOSFET ID25 = 25A Q3-CIass RDS( n) 154m trr 250ns (EIectricaIIy Is Iated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symb I Test C nditi ns Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V VGSS Continuous 30 V G VGSM Transient 40 ... See More ⇒

7.3. Size:153K ixys
ixfr44n50p.pdf pdf_icon