All MOSFET. IXFX200N10P Equivalents Search

 

IXFX200N10P Spec and Replacement


   Type Designator: IXFX200N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 830 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 150 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: PLUS247

 IXFX200N10P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFX200N10P Specs

 ..1. Size:113K  ixys
 ixfk200n10p ixfx200n10p.pdf pdf_icon

IXFX200N10P

VDSS = 100 V IXFK 200N10P PolarTM HiPerFET ID25 = 200 A IXFX 200N10P Power MOSFET RDS(on) 7.5 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20... See More ⇒

 9.1. Size:122K  ixys
 ixfk260n17t ixfx260n17t.pdf pdf_icon

IXFX200N10P

Advance Technical Information GigaMOSTM VDSS = 170V IXFK260N17T ID25 = 260A Power MOSFET IXFX260N17T RDS(on) 6.5m trr 200ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 170 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS =... See More ⇒

 9.2. Size:251K  ixys
 ixfk26n90 ixfx26n90 ixfk25n90 ixfx25n90.pdf pdf_icon

IXFX200N10P

www.DataSheet4U.com VDSS IDSS RDS(on) trr HiPerFETTM Power MOSFETs IXFK/IXFX 26N90 900 V 26 A 0.30 W 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 W 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 900 V VGS Continuous 20 V (TAB) G VGSM Transient 30 V D S ID2... See More ⇒

 9.3. Size:124K  ixys
 ixfk24n100q3 ixfx24n100q3.pdf pdf_icon

IXFX200N10P

Advance Technical Information HiperFETTM VDSS = 1000V IXFK24N100Q3 Power MOSFETs ID25 = 24A IXFX24N100Q3 Q3-Class RDS(on) 440m trr 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 1000 V D S VDGR TJ = 25 C to 150 ... See More ⇒

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Detailed specifications: IXFX120N30T , IXFX140N25T , IXFX140N30P , IXFX160N30T , IXFX170N20P , IXFX170N20T , IXFX180N15P , IXFX180N25T , 13N50 , IXFX20N120 , IXFX20N120P , IXFX21N100F , IXFX21N100Q , IXFX220N15P , IXFX220N17T2 , IXFX230N20T , IXFX240N15T2 .

Keywords - IXFX200N10P MOSFET specs

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