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IXFX73N30Q Spec and Replacement


   Type Designator: IXFX73N30Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 481 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 73 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: PLUS247

 IXFX73N30Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFX73N30Q Specs

 9.1. Size:127K  ixys
 ixfx74n50p2 ixfk74n50p2.pdf pdf_icon

IXFX73N30Q

Advance Technical Information PolarP2TM HiPerFETTM VDSS = 500V IXFK74N50P2 Power MOSFET ID25 = 74A IXFX74N50P2 RDS(on) 77m trr 250ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 500 V S VDGR TJ = 25 C to 150 C, RGS ... See More ⇒

 9.2. Size:133K  ixys
 ixfk78n50p3 ixfx78n50p3.pdf pdf_icon

IXFX73N30Q

Preliminary Technical Information Polar3TM HiPerFETTM VDSS = 500V IXFK78N50P3 Power MOSFETs ID25 = 78A IXFX78N50P3 RDS(on) 68m trr 250ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 500 V Tab VDGR TJ = 25 C... See More ⇒

Detailed specifications: IXFX60N55Q2 , IXFX62N25 , IXFX64N50P , IXFX64N50Q3 , IXFX64N60P , IXFX64N60P3 , IXFX64N60Q3 , IXFX66N50Q2 , EMB04N03H , IXFX74N50P2 , IXFX78N50P3 , IXFX80N50P , IXFX80N50Q3 , IXFX80N60P3 , IXFX88N20Q , IXFX94N50P2 , IXFX98N50P3 .

History: IPP60R190P6 | AP02N90JB

Keywords - IXFX73N30Q MOSFET specs

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