All MOSFET. IXFX73N30Q Datasheet

 

IXFX73N30Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFX73N30Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 481 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 73 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 190 nC
   trⓘ - Rise Time: 250 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: PLUS247

 IXFX73N30Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFX73N30Q Datasheet (PDF)

 9.1. Size:127K  ixys
 ixfx74n50p2 ixfk74n50p2.pdf

IXFX73N30Q IXFX73N30Q

Advance Technical InformationPolarP2TM HiPerFETTM VDSS = 500VIXFK74N50P2Power MOSFET ID25 = 74AIXFX74N50P2 RDS(on) 77m trr 250nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 150C 500 VSVDGR TJ = 25C to 150C, RGS

 9.2. Size:133K  ixys
 ixfk78n50p3 ixfx78n50p3.pdf

IXFX73N30Q IXFX73N30Q

Preliminary Technical InformationPolar3TM HiPerFETTM VDSS = 500VIXFK78N50P3Power MOSFETs ID25 = 78AIXFX78N50P3 RDS(on) 68m trr 250nsN-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeGDSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 500 V TabVDGR TJ = 25C

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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