All MOSFET. IXKC25N80C Datasheet

 

IXKC25N80C Datasheet and Replacement


   Type Designator: IXKC25N80C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 550 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: ISOPLUS220
 

 IXKC25N80C substitution

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IXKC25N80C Datasheet (PDF)

 9.1. Size:172K  ixys
 ixkc20n60c.pdf pdf_icon

IXKC25N80C

IXKC 20N60CVDSS = 600 VCoolMOS 1) Power MOSFETID25 = 15 ARDS(on) max = 190 mElectrically isolated back surface2500 V electrical isolationN-Channel Enhancement ModeDISOPLUS220TMLow RDSon, high VDSS MOSFETUltra low gate chargeGGD Sisolated tabSE72873FeaturesMOSFET Silicon chip on Direct-Copper-Bond Symbol Conditions Maximum Ratingssubstrate

 9.2. Size:262K  ixys
 ixkc23n60c5.pdf pdf_icon

IXKC25N80C

IXKC 23N60C5ID25 = 23 ACoolMOS 1) Power MOSFETVDSS = 600 VRDS(on) max = 0.1 Electrically isolated back surface2500 V electrical isolation N-Channel Enhancement ModeDISOPLUS220TMLow RDSon, high VDSS MOSFETUltra low gate chargeGGD Sisolated backS surfaceE72873Preliminary dataFeaturesMOSFET Silicon chip on Direct-Copper-Bond Symbol Conditions

Datasheet: IXFX98N50P3 , IXFZ140N25T , IXFZ520N075T2 , IXKC13N80C , IXKC15N60C5 , IXKC19N60C5 , IXKC20N60C , IXKC23N60C5 , 50N06 , IXKC40N60C , IXKF40N60SCD1 , IXKH20N60C5 , IXKH24N60C5 , IXKH30N60C5 , IXKH35N60C5 , IXKH47N60C , IXKH70N60C5 .

Keywords - IXKC25N80C MOSFET datasheet

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