IXKC25N80C MOSFET Datasheet: N-Ch, 800V, 25A. Full specification with pinout and replacement list

IXKC25N80C Specs and Replacement

   Type Designator: IXKC25N80C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 550 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: ISOPLUS220

IXKC25N80C substitution

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IXKC25N80C datasheet

9.1. Size:172K ixys
ixkc20n60c.pdf pdf_icon

IXKC 20N60C VDSS = 600 V CoolMOS 1) Power MOSFET ID25 = 15 A RDS(on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode D ISOPLUS220TM Low RDSon, high VDSS MOSFET Ultra low gate charge G G D S isolated tab S E72873 Features MOSFET Silicon chip on Direct-Copper-Bond Symbol Conditions Maximum Ratings substrate ... See More ⇒

9.2. Size:262K ixys
ixkc23n60c5.pdf pdf_icon

IXKC 23N60C5 ID25 = 23 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.1 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode D ISOPLUS220TM Low RDSon, high VDSS MOSFET Ultra low gate charge G G D S isolated back S surface E72873 Preliminary data Features MOSFET Silicon chip on Direct-Copper-Bond Symbol Conditions... See More ⇒

Detailed specifications: IXFX98N50P3 , IXFZ140N25T , IXFZ520N075T2 , IXKC13N80C , IXKC15N60C5 , IXKC19N60C5 , IXKC20N60C , IXKC23N60C5 , 50N06 , IXKC40N60C , IXKF40N60SCD1 , IXKH20N60C5 , IXKH24N60C5 , IXKH30N60C5 , IXKH35N60C5 , IXKH47N60C , IXKH70N60C5 .