IXKF40N60SCD1 Datasheet. Specs and Replacement

Type Designator: IXKF40N60SCD1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 41 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: ISOPLUSI4PAC

IXKF40N60SCD1 substitution

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IXKF40N60SCD1 datasheet

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IXKF40N60SCD1

IXKF 40N60SCD1 VDSS = 600 V CoolMOS 1) Power MOSFET ID25 = 41 A with Series Schottky Diode and RDS(on) typ. = 60 m Ultra Fast Antiparallel Diode trr = 70 ns in High Voltage ISOPLUS i4-PAC 5 ISOPLUS i4-PAC DS DF Preliminary data 1 2 T 1 5 E72873 2 Features MOSFET T fast CoolMOS 1) power MOSFET 3rd Symbol Conditions Maximum Ratings generation - high bl... See More ⇒

Detailed specifications: IXFZ520N075T2, IXKC13N80C, IXKC15N60C5, IXKC19N60C5, IXKC20N60C, IXKC23N60C5, IXKC25N80C, IXKC40N60C, IRFZ44, IXKH20N60C5, IXKH24N60C5, IXKH30N60C5, IXKH35N60C5, IXKH47N60C, IXKH70N60C5, IXKK85N60C, IXKN40N60C

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