All MOSFET. IXKF40N60SCD1 Datasheet

 

IXKF40N60SCD1 Datasheet and Replacement


   Type Designator: IXKF40N60SCD1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 41 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: ISOPLUSI4PAC
 

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IXKF40N60SCD1 Datasheet (PDF)

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IXKF40N60SCD1

IXKF 40N60SCD1VDSS = 600 VCoolMOS 1) Power MOSFETID25 = 41 Awith Series Schottky Diode and RDS(on) typ. = 60 mUltra Fast Antiparallel Diodetrr = 70 nsin High Voltage ISOPLUS i4-PAC5 ISOPLUS i4-PACDSDFPreliminary data12T15 E728732FeaturesMOSFET T fast CoolMOS 1) power MOSFET 3rd Symbol Conditions Maximum Ratingsgeneration - high bl

Datasheet: IXFZ520N075T2 , IXKC13N80C , IXKC15N60C5 , IXKC19N60C5 , IXKC20N60C , IXKC23N60C5 , IXKC25N80C , IXKC40N60C , IRFZ44 , IXKH20N60C5 , IXKH24N60C5 , IXKH30N60C5 , IXKH35N60C5 , IXKH47N60C , IXKH70N60C5 , IXKK85N60C , IXKN40N60C .

History: STP90N6F6 | BSZ028N04LS | STP9437

Keywords - IXKF40N60SCD1 MOSFET datasheet

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