IXKH70N60C5 Datasheet. Specs and Replacement

Type Designator: IXKH70N60C5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 600 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO247

IXKH70N60C5 substitution

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IXKH70N60C5 datasheet

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IXKH70N60C5

IXKH 70N60C5 ID25 = 70 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.045 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D D(TAB) S S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25 C 600 V - High blocking capability VGS 20 V - Low... See More ⇒

Detailed specifications: IXKC25N80C, IXKC40N60C, IXKF40N60SCD1, IXKH20N60C5, IXKH24N60C5, IXKH30N60C5, IXKH35N60C5, IXKH47N60C, IRFP260N, IXKK85N60C, IXKN40N60C, IXKN45N80C, IXKN75N60C, IXKP10N60C5, IXKP10N60C5M, IXKP13N60C5, IXKP13N60C5M

Keywords - IXKH70N60C5 MOSFET specs

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