All MOSFET. IXKP13N60C5M Datasheet

 

IXKP13N60C5M Datasheet and Replacement


   Type Designator: IXKP13N60C5M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO220
 

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IXKP13N60C5M Datasheet (PDF)

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IXKP13N60C5M

IXKP 13N60C5MID25 = 6.5 ACoolMOS 1) Power MOSFETVDSS = 600 VRDS(on) max = 0.3 Fully isolated packageN-Channel Enhancement ModeLow RDSon, High VDSS MOSFETDTO-220 FPUltra low gate chargeGDGSPreliminary dataSFeaturesMOSFET fast CoolMOS 1) power MOSFETSymbol Conditions Maximum Ratings4th generationVDSS TVJ = 25C 600 V - High blocking capabi

Datasheet: IXKH70N60C5 , IXKK85N60C , IXKN40N60C , IXKN45N80C , IXKN75N60C , IXKP10N60C5 , IXKP10N60C5M , IXKP13N60C5 , P55NF06 , IXKP20N60C5 , IXKP20N60C5M , IXKP24N60C5 , IXKP24N60C5M , IXKR25N80C , IXKR40N60C , IXKR47N60C5 , IXTA05N100 .

History: SVS60R190TD4 | FP8V50 | SFF23N60Z | NCEP01T13B

Keywords - IXKP13N60C5M MOSFET datasheet

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