IXKP24N60C5 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXKP24N60C5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 24 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 40 nC
Rise Time (tr): 390 nS
Maximum Drain-Source On-State Resistance (Rds): 0.165 Ohm
Package: TO220
IXKP24N60C5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXKP24N60C5 Datasheet (PDF)
5.1. ixkp20n60c5m.pdf 
Size:101K _ixys
IXKP 20N60C5M ID25 = 7.6 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.2 ? Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D TO-220 FP Ultra low gate charge G D G S Preliminary data S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25C 600 V - High blocking capability V
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