All MOSFET. IXKP24N60C5 Datasheet

 

IXKP24N60C5 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXKP24N60C5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 24 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 40 nC

Rise Time (tr): 390 nS

Maximum Drain-Source On-State Resistance (Rds): 0.165 Ohm

Package: TO220

IXKP24N60C5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXKP24N60C5 Datasheet (PDF)

5.1. ixkp20n60c5m.pdf Size:101K _ixys

IXKP24N60C5
IXKP24N60C5

IXKP 20N60C5M ID25 = 7.6 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.2 ? Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D TO-220 FP Ultra low gate charge G D G S Preliminary data S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25C 600 V - High blocking capability V

Datasheet: IXKN45N80C , IXKN75N60C , IXKP10N60C5 , IXKP10N60C5M , IXKP13N60C5 , IXKP13N60C5M , IXKP20N60C5 , IXKP20N60C5M , IRF730 , IXKP24N60C5M , IXKR25N80C , IXKR40N60C , IXKR47N60C5 , IXTA05N100 , IXTA05N100P , IXTA06N120P , IXTA08N100D2 .

 

 
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