IXKP24N60C5 Datasheet and Replacement
Type Designator: IXKP24N60C5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 40 nC
tr ⓘ - Rise Time: 390 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
Package: TO220
IXKP24N60C5 substitution
IXKP24N60C5 Datasheet (PDF)
ixkp20n60c5m.pdf

IXKP 20N60C5MID25 = 7.6 ACoolMOS 1) Power MOSFETVDSS = 600 VRDS(on) max = 0.2 Fully isolated packageN-Channel Enhancement ModeLow RDSon, High VDSS MOSFETDTO-220 FPUltra low gate chargeGDGSPreliminary dataSFeaturesMOSFET fast CoolMOS 1) power MOSFETSymbol Conditions Maximum Ratings4th generationVDSS TVJ = 25C 600 V - High blocking capabi
ixkp20n60c5.pdf

isc N-Channel MOSFET Transistor IXKP20N60C5FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitched mode power suppliesUninterruptible power suppli
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SM6A07NSF | IRFP4868 | CS20N60P
Keywords - IXKP24N60C5 MOSFET datasheet
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History: SM6A07NSF | IRFP4868 | CS20N60P



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