IXTA18P10T Datasheet. Specs and Replacement

Type Designator: IXTA18P10T

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO263

IXTA18P10T substitution

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IXTA18P10T datasheet

 8.1. Size:203K  ixys
 ixta182n055t7.pdf pdf_icon

IXTA18P10T

Preliminary Technical Information VDSS = 55 V IXTA182N055T7 TrenchMVTM ID25 = 182 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V 1 ID25 TC = 25 ... See More ⇒

 8.2. Size:197K  ixys
 ixta180n085t7.pdf pdf_icon

IXTA18P10T

Preliminary Technical Information VDSS = 85 V IXTA180N085T7 TrenchMVTM ID25 = 180 A Power MOSFET RDS(on) 5.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V 1 ID25 TC = 25 ... See More ⇒

 8.3. Size:197K  ixys
 ixta180n10t7.pdf pdf_icon

IXTA18P10T

PreliminaryTechnical Information VDSS = 100 V IXTA180N10T7 TrenchMVTM ID25 = 180 A Power MOSFET RDS(on) 6.4 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V 1 ID25 TC = 25 ... See More ⇒

 8.4. Size:221K  ixys
 ixta182n055t ixtp182n055t.pdf pdf_icon

IXTA18P10T

Preliminary Technical Information IXTA182N055T VDSS = 55 V TrenchMVTM IXTP182N055T ID25 = 182 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 T... See More ⇒

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Detailed specifications: IXTA16N50P, IXTA170N075T2, IXTA180N085T, IXTA180N085T7, IXTA180N10T, IXTA180N10T7, IXTA182N055T, IXTA182N055T7, 2N60, IXTA1N100P, IXTA1N120P, IXTA1N80, IXTA1N80P, IXTA1R4N100P, IXTA1R4N120P, IXTA1R6N100D2, IXTA1R6N50D2

Keywords - IXTA18P10T MOSFET specs

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