All MOSFET. IXTA98N075T7 Datasheet

 

IXTA98N075T7 Datasheet and Replacement


   Type Designator: IXTA98N075T7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Id| ⓘ - Maximum Drain Current: 98 A
   tr ⓘ - Rise Time: 100 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO263
 

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IXTA98N075T7 Datasheet (PDF)

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IXTA98N075T7

Preliminary Technical InformationIXTA90N055T VDSS = 55 VTrenchMVTMIXTP90N055T ID25 = 90 APower MOSFET RDS(on) 8.8 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 TC =

Datasheet: IXTA88N085T7 , IXTA8N50P , IXTA90N055T , IXTA90N055T2 , IXTA90N075T2 , IXTA90N15T , IXTA96P085T , IXTA98N075T , 13N50 , IXTB30N100L , IXTB62N50L , IXTC110N055T , IXTC110N25T , IXTC13N50 , IXTC160N10T , IXTC180N085T , IXTC180N10T .

History: HMS75N65T | ME2N7002D | AP3A010MT | ME70N03S-G | CHM4559JGP | FQNL1N50BTA | DMG1023UV

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