All MOSFET. IXTB62N50L Datasheet

 

IXTB62N50L Datasheet and Replacement


   Type Designator: IXTB62N50L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 800 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id|ⓘ - Maximum Drain Current: 62 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 550 nC
   trⓘ - Rise Time: 500 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: PLUS264
      - MOSFET Cross-Reference Search

 

IXTB62N50L Datasheet (PDF)

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IXTB62N50L

Preliminary Technical InformationIXTB62N50L VDSS = 500 VLinear Power MOSFETID25 = 62 AWith Extended FBSOA RDS(on) 0.1 N-Channel Enhancement ModeSymbol Test Conditions Maximum RatingsPLUS 264TM (IXTB)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 30 VVGSM Transient 40 VID25 TC = 25C 62

Datasheet: IXTA90N055T , IXTA90N055T2 , IXTA90N075T2 , IXTA90N15T , IXTA96P085T , IXTA98N075T , IXTA98N075T7 , IXTB30N100L , IRFZ46N , IXTC110N055T , IXTC110N25T , IXTC13N50 , IXTC160N10T , IXTC180N085T , IXTC180N10T , IXTC200N075T , IXTC200N085T .

History: 2SJ473-01S | TPC8027

Keywords - IXTB62N50L MOSFET datasheet

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