IXTB62N50L Datasheet. Specs and Replacement

Type Designator: IXTB62N50L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 800 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 62 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 500 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: PLUS264

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IXTB62N50L datasheet

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IXTB62N50L

Preliminary Technical Information IXTB62N50L VDSS = 500 V Linear Power MOSFET ID25 = 62 A With Extended FBSOA RDS(on) 0.1 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings PLUS 264TM (IXTB) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V VGSM Transient 40 V ID25 TC = 25 C 62... See More ⇒

Detailed specifications: IXTA90N055T, IXTA90N055T2, IXTA90N075T2, IXTA90N15T, IXTA96P085T, IXTA98N075T, IXTA98N075T7, IXTB30N100L, SI2302, IXTC110N055T, IXTC110N25T, IXTC13N50, IXTC160N10T, IXTC180N085T, IXTC180N10T, IXTC200N075T, IXTC200N085T

Keywords - IXTB62N50L MOSFET specs

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