All MOSFET. IXTC200N10T Datasheet

 

IXTC200N10T Datasheet and Replacement


   Type Designator: IXTC200N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 101 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 152 nC
   tr ⓘ - Rise Time: 76 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: ISOPLUS220
 

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IXTC200N10T Datasheet (PDF)

 9.1. Size:175K  ixys
 ixtc26n50p.pdf pdf_icon

IXTC200N10T

IXTC 26N50P VDSS = 500 VPolarHVTMID25 = 15 APower MOSFET RDS(on) 260 m ISOPLUS220TM(Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 V ISOPLUS220TM (IXTC)E153432VDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGS Continuous 30 VVGSM Transi

 9.2. Size:186K  ixys
 ixtc280n055t.pdf pdf_icon

IXTC200N10T

Preliminary Technical InformationIXTC280N055T VDSS = 55 VTrenchMVTMID25 = 145 APower MOSFET RDS(on) 3.6 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient

 9.3. Size:187K  ixys
 ixtc220n055t.pdf pdf_icon

IXTC200N10T

Preliminary Technical InformationIXTC220N055T VDSS = 55 VTrenchMVTMID25 = 130 APower MOSFET RDS(on) 4.4 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient

 9.4. Size:186K  ixys
 ixtc220n075t.pdf pdf_icon

IXTC200N10T

Preliminary Technical InformationIXTC220N075T VDSS = 75 VTrenchMVTMID25 = 115 APower MOSFET RDS(on) 5.0 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient

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Keywords - IXTC200N10T MOSFET datasheet

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