All MOSFET. IXTD110N25T-8W Datasheet

 

IXTD110N25T-8W Datasheet and Replacement


   Type Designator: IXTD110N25T-8W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Qg ⓘ - Total Gate Charge: 157 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: DIE
 

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IXTD110N25T-8W Datasheet (PDF)

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IXTD110N25T-8W

Preliminary Technical InformationIXTD110N25T-8WVDSS = 250VTrench GatePower MOSFET DieN-Channel Enhancement ModeDie Outline Notes:1. Die Thickness: 200 25 m2. Die Size Tolerance: 50 m3. Top Bonding Pad Metal:30 K nominally thick Al4. Back Metal: 3 layers of Ti, Ni & Au;2500 nominally thick Au5. G = Gate, S = SourceD = Drain (back side)6. Recommend wi

Datasheet: IXTC240N055T , IXTC250N075T , IXTC26N50P , IXTC280N055T , IXTC36P15P , IXTC62N15P , IXTC75N10 , IXTC96N25T , AON7403 , IXTE250N10 , IXTF03N400 , IXTF1N250 , IXTF1N400 , IXTF200N10T , IXTF230N085T , IXTF250N075T , IXTF280N055T .

History: STU09N25 | 2SK2367

Keywords - IXTD110N25T-8W MOSFET datasheet

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