IXTD110N25T-8W Datasheet. Specs and Replacement

Type Designator: IXTD110N25T-8W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Id| ⓘ - Maximum Drain Current: 110 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: DIE

IXTD110N25T-8W substitution

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IXTD110N25T-8W datasheet

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IXTD110N25T-8W

Preliminary Technical Information IXTD110N25T-8W VDSS = 250V Trench Gate Power MOSFET Die N-Channel Enhancement Mode Die Outline Notes 1. Die Thickness 200 25 m 2. Die Size Tolerance 50 m 3. Top Bonding Pad Metal 30 K nominally thick Al 4. Back Metal 3 layers of Ti, Ni & Au; 2500 nominally thick Au 5. G = Gate, S = Source D = Drain (back side) 6. Recommend wi... See More ⇒

Detailed specifications: IXTC240N055T, IXTC250N075T, IXTC26N50P, IXTC280N055T, IXTC36P15P, IXTC62N15P, IXTC75N10, IXTC96N25T, IRF9640, IXTE250N10, IXTF03N400, IXTF1N250, IXTF1N400, IXTF200N10T, IXTF230N085T, IXTF250N075T, IXTF280N055T

Keywords - IXTD110N25T-8W MOSFET specs

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