All MOSFET. IXTD110N25T-8W Datasheet

 

IXTD110N25T-8W MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTD110N25T-8W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Qgⓘ - Total Gate Charge: 157 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: DIE

 IXTD110N25T-8W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTD110N25T-8W Datasheet (PDF)

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 ixtd110n25t-8w.pdf

IXTD110N25T-8W IXTD110N25T-8W

Preliminary Technical InformationIXTD110N25T-8WVDSS = 250VTrench GatePower MOSFET DieN-Channel Enhancement ModeDie Outline Notes:1. Die Thickness: 200 25 m2. Die Size Tolerance: 50 m3. Top Bonding Pad Metal:30 K nominally thick Al4. Back Metal: 3 layers of Ti, Ni & Au;2500 nominally thick Au5. G = Gate, S = SourceD = Drain (back side)6. Recommend wi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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