All MOSFET. IXTD110N25T-8W Datasheet

 

IXTD110N25T-8W Datasheet and Replacement


   Type Designator: IXTD110N25T-8W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: DIE
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IXTD110N25T-8W Datasheet (PDF)

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IXTD110N25T-8W

Preliminary Technical InformationIXTD110N25T-8WVDSS = 250VTrench GatePower MOSFET DieN-Channel Enhancement ModeDie Outline Notes:1. Die Thickness: 200 25 m2. Die Size Tolerance: 50 m3. Top Bonding Pad Metal:30 K nominally thick Al4. Back Metal: 3 layers of Ti, Ni & Au;2500 nominally thick Au5. G = Gate, S = SourceD = Drain (back side)6. Recommend wi

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History: 9N90C | IRFR9310 | PHP79NQ08LT | BUK9M7R2-40E | HUFA76633S3S | AT4N65S | ME75N03-G

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