IXTE250N10 Datasheet and Replacement

   Type Designator: IXTE250N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 730 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 250 A
   Qg ⓘ - Total Gate Charge: 390 nC
   tr ⓘ - Rise Time: 150 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: ISOPLUS227
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