IXTE250N10 Datasheet and Replacement
Type Designator: IXTE250N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 730 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Id| ⓘ - Maximum Drain Current: 250 A
tr ⓘ - Rise Time: 150 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: ISOPLUS227
IXTE250N10 substitution
IXTE250N10 Datasheet (PDF)
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Datasheet: IXTC250N075T , IXTC26N50P , IXTC280N055T , IXTC36P15P , IXTC62N15P , IXTC75N10 , IXTC96N25T , IXTD110N25T-8W , 8N60 , IXTF03N400 , IXTF1N250 , IXTF1N400 , IXTF200N10T , IXTF230N085T , IXTF250N075T , IXTF280N055T , IXTH02N250 .
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