IXTF1N400 Datasheet. Specs and Replacement

Type Designator: IXTF1N400

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 4000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3500 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 60 Ohm

Package: ISOPLUS I4PAK

IXTF1N400 substitution

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IXTF1N400 datasheet

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IXTF1N400

Advance Technical Information High Voltage VDSS = 4500V IXTF1N450 Power MOSFET ID25 = 0.9A RDS(on) 85 (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings 1 2 Isolated Tab VDSS TJ = 25 C to 150 C 4500 V 5 VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V 1 = Gate ... See More ⇒

Detailed specifications: IXTC36P15P, IXTC62N15P, IXTC75N10, IXTC96N25T, IXTD110N25T-8W, IXTE250N10, IXTF03N400, IXTF1N250, EMB04N03H, IXTF200N10T, IXTF230N085T, IXTF250N075T, IXTF280N055T, IXTH02N250, IXTH03N400, IXTH102N15T, IXTH102N20T

Keywords - IXTF1N400 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.