All MOSFET. IXTH15N50L2 Datasheet

 

IXTH15N50L2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTH15N50L2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 123 nC
   trⓘ - Rise Time: 570 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO247

 IXTH15N50L2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTH15N50L2 Datasheet (PDF)

 0.1. Size:133K  ixys
ixth15n50l2-ixtp15n50l2.pdf

IXTH15N50L2
IXTH15N50L2

Linear L2TM Power VDSS = 500VIXTH15N50L2MOSFET w/Extended ID25 = 15AIXTP15N50L2 RDS(on) 480m FBSOAN-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VG (TAB)DVDGR TJ = 25C to 150C, RGS = 1M 500 VSVGSS Continuous 20 VTO-247 (IXTH)VGSM Transient 30

 7.2. Size:148K  ixys
ixth15n70.pdf

IXTH15N50L2
IXTH15N50L2

IXTH15N70 PCB24IXTH 15N70 VDSS = 700 VMegaMOSTMFET ID (cont) = 15 ARDS(on) = 0.45 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C; RGS = 1 M 700 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 T

 7.3. Size:316K  ixys
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf

IXTH15N50L2
IXTH15N50L2

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