All MOSFET. IXTH90P10P Datasheet

 

IXTH90P10P Datasheet and Replacement


   Type Designator: IXTH90P10P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 462 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 144 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO247
 

 IXTH90P10P substitution

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IXTH90P10P Datasheet (PDF)

 9.1. Size:198K  ixys
 ixth96n20p ixtt96n20p ixtq96n20p.pdf pdf_icon

IXTH90P10P

IXTH 96N20P VDSS = 200 VPolarHTTMIXTQ 96N20P ID25 = 96 APower MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGDVDSS TJ = 25 C to 150 C 200 VS(TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 200 VVGSS Continous 20 VTO-3P (IXTQ)VGSM Transient

 9.2. Size:239K  ixys
 ixth96n20p ixtq96n20p ixtt96n20p.pdf pdf_icon

IXTH90P10P

IXTH 96N20P VDSS = 200 VPolarHTTMIXTQ 96N20P ID25 = 96 APower MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGDVDSS TJ = 25 C to 150 C 200 VS(TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 200 VVGSS Continous 20 VTO-3P (IXTQ)VGSM Transient

Datasheet: IXTH75N15 , IXTH76N25T , IXTH76P10T , IXTH80N20L , IXTH86N25T , IXTH88N15 , IXTH88N30P , IXTH90N15T , IRF3205 , IXTH96N20P , IXTH96N25T , IXTH96P085T , IXTJ36N20 , IXTK100N25P , IXTK102N30P , IXTK110N20L2 , IXTK110N30 .

History: QM2411G | IPB120N08S4-03 | IXFV110N10P | CS65N20-30 | SQM90142E | DMG8880LSS | C3M0065100K

Keywords - IXTH90P10P MOSFET datasheet

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