IXTK128N15 Datasheet. Specs and Replacement

Type Designator: IXTK128N15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 540 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 128 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO264

IXTK128N15 substitution

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IXTK128N15 datasheet

 8.1. Size:178K  ixys
 ixtk120p20t ixtx120p20t.pdf pdf_icon

IXTK128N15

Advance Technical Information TrenchPTM VDSS = - 200V IXTK120P20T Power MOSFETs ID25 = - 120A IXTX120P20T RDS(on) 30m trr 300ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C - 200 V D S VDGR TJ = 25 C to 150 C, RGS ... See More ⇒

 8.2. Size:191K  ixys
 ixtk120n20p ixtq120n20p.pdf pdf_icon

IXTK128N15

IXTK 120N20P PolarHTTM VDSS = 200 V IXTQ 120N20P Power MOSFET ID25 = 120 A RDS(on) 22 m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M 200 V G VGS Continuous 20 V D (TAB) S VGSM Transient 30 V ID25 TC = 25 ... See More ⇒

 8.3. Size:159K  ixys
 ixtk120n65x2 ixtx120n65x2.pdf pdf_icon

IXTK128N15

Advance Technical Information X2-Class VDSS = 650V IXTK120N65X2 Power MOSFET ID25 = 120A IXTX120N65X2 RDS(on) 24m N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Continuous 30 V PLUS247 (IX... See More ⇒

 8.4. Size:163K  ixys
 ixtk120n25p.pdf pdf_icon

IXTK128N15

VDSS = 250 V IXTK 120N25P PolarHTTM ID25 = 120 A Power MOSFET RDS(on) 24 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 250 V VDGR TJ = 25 C to 175 C; RGS = 1 M 250 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 120 A G D (TAB) ID(RMS... See More ⇒

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Detailed specifications: IXTJ36N20, IXTK100N25P, IXTK102N30P, IXTK110N20L2, IXTK110N30, IXTK120N20P, IXTK120N25, IXTK120N25P, IRFB4110, IXTK140N20P, IXTK140N30P, IXTK150N15P, IXTK160N20, IXTK170N10P, IXTK170P10P, IXTK17N120L, IXTK180N15

Keywords - IXTK128N15 MOSFET specs

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