All MOSFET. IXTK32P60P Datasheet

 

IXTK32P60P Datasheet and Replacement


   Type Designator: IXTK32P60P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 196 nC
   tr ⓘ - Rise Time: 480 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO264
 

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IXTK32P60P Datasheet (PDF)

 9.1. Size:74K  ixys
 ixtk33n45 ixtk33n50.pdf pdf_icon

IXTK32P60P

 9.2. Size:92K  ixys
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IXTK32P60P

IXTK 33N50 VDSS = 500 VHigh CurrentID (cont) = 33 AMegaMOSTMFETRDS(on) = 0.17 N-Channel Enhancement ModePreliminary dataSymbol Test conditions Maximum ratings TO-264 AAVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1.0 M 500 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)GDID25 TC = 25C 33 ASIDM TC = 25C, pulse

Datasheet: IXTK17N120L , IXTK180N15 , IXTK180N15P , IXTK200N10L2 , IXTK200N10P , IXTK20N140 , IXTK22N100L , IXTK250N10 , IRF9540 , IXTK34N80 , IXTK40P50P , IXTK46N50L , IXTK550N055T2 , IXTK5N250 , IXTK600N04T2 , IXTK60N50L2 , IXTK62N25 .

History: IXTM10N90 | IXTM10N60A | IXTM11N80 | IXTM20N60 | IXTM4N100

Keywords - IXTK32P60P MOSFET datasheet

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