IXTK32P60P Datasheet. Specs and Replacement

Type Designator: IXTK32P60P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 890 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 480 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO264

IXTK32P60P substitution

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IXTK32P60P datasheet

 9.1. Size:74K  ixys
 ixtk33n45 ixtk33n50.pdf pdf_icon

IXTK32P60P

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 9.2. Size:92K  ixys
 ixtk33n50.pdf pdf_icon

IXTK32P60P

IXTK 33N50 VDSS = 500 V High Current ID (cont) = 33 A MegaMOSTMFET RDS(on) = 0.17 N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings TO-264 AA VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1.0 M 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) G D ID25 TC = 25 C 33 A S IDM TC = 25 C, pulse ... See More ⇒

Detailed specifications: IXTK17N120L, IXTK180N15, IXTK180N15P, IXTK200N10L2, IXTK200N10P, IXTK20N140, IXTK22N100L, IXTK250N10, IRF9540, IXTK34N80, IXTK40P50P, IXTK46N50L, IXTK550N055T2, IXTK5N250, IXTK600N04T2, IXTK60N50L2, IXTK62N25

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.