All MOSFET. IXTK34N80 Datasheet

 

IXTK34N80 Datasheet and Replacement


   Type Designator: IXTK34N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 560 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   tr ⓘ - Rise Time: 550 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO264
 

 IXTK34N80 substitution

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IXTK34N80 Datasheet (PDF)

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IXTK34N80

 9.2. Size:92K  ixys
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IXTK34N80

IXTK 33N50 VDSS = 500 VHigh CurrentID (cont) = 33 AMegaMOSTMFETRDS(on) = 0.17 N-Channel Enhancement ModePreliminary dataSymbol Test conditions Maximum ratings TO-264 AAVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1.0 M 500 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)GDID25 TC = 25C 33 ASIDM TC = 25C, pulse

Datasheet: IXTK180N15 , IXTK180N15P , IXTK200N10L2 , IXTK200N10P , IXTK20N140 , IXTK22N100L , IXTK250N10 , IXTK32P60P , 2N7000 , IXTK40P50P , IXTK46N50L , IXTK550N055T2 , IXTK5N250 , IXTK600N04T2 , IXTK60N50L2 , IXTK62N25 , IXTK75N30 .

History: 2N4222A | FDS7066N7 | HAT1047RJ | ME80N08AF-G | CJK8804 | OSG65R099TT3ZF | IPD60R450E6

Keywords - IXTK34N80 MOSFET datasheet

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