All MOSFET. IXTK40P50P Datasheet

 

IXTK40P50P Datasheet and Replacement


   Type Designator: IXTK40P50P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 477 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: TO264
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IXTK40P50P Datasheet (PDF)

 9.1. Size:117K  ixys
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IXTK40P50P

Preliminary Technical InformationIXTK46N50L VDSS = 500 VLinear Power MOSFETIXTX46N50L ID25 = 46 AWith Extended FBSOA RDS(on) 0.16 N-Channel Enhancement ModeTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VGDVGS Continuous 30 VS(TAB)VGSM Transient

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

Keywords - IXTK40P50P MOSFET datasheet

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