IXTK40P50P Datasheet. Specs and Replacement

Type Designator: IXTK40P50P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 890 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 477 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: TO264

IXTK40P50P substitution

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IXTK40P50P datasheet

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IXTK40P50P

Preliminary Technical Information IXTK46N50L VDSS = 500 V Linear Power MOSFET IXTX46N50L ID25 = 46 A With Extended FBSOA RDS(on) 0.16 N-Channel Enhancement Mode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G D VGS Continuous 30 V S (TAB) VGSM Transient ... See More ⇒

Detailed specifications: IXTK180N15P, IXTK200N10L2, IXTK200N10P, IXTK20N140, IXTK22N100L, IXTK250N10, IXTK32P60P, IXTK34N80, 2SK3878, IXTK46N50L, IXTK550N055T2, IXTK5N250, IXTK600N04T2, IXTK60N50L2, IXTK62N25, IXTK75N30, IXTK80N25

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