All MOSFET. IXTK40P50P Datasheet

 

IXTK40P50P Datasheet and Replacement


   Type Designator: IXTK40P50P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 477 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: TO264
 

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IXTK40P50P Datasheet (PDF)

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IXTK40P50P

Preliminary Technical InformationIXTK46N50L VDSS = 500 VLinear Power MOSFETIXTX46N50L ID25 = 46 AWith Extended FBSOA RDS(on) 0.16 N-Channel Enhancement ModeTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VGDVGS Continuous 30 VS(TAB)VGSM Transient

Datasheet: IXTK180N15P , IXTK200N10L2 , IXTK200N10P , IXTK20N140 , IXTK22N100L , IXTK250N10 , IXTK32P60P , IXTK34N80 , 8205A , IXTK46N50L , IXTK550N055T2 , IXTK5N250 , IXTK600N04T2 , IXTK60N50L2 , IXTK62N25 , IXTK75N30 , IXTK80N25 .

History: IXTK250N10

Keywords - IXTK40P50P MOSFET datasheet

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