IXTK60N50L2 Datasheet. Specs and Replacement

Type Designator: IXTK60N50L2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 960 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 980 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO264

IXTK60N50L2 substitution

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IXTK60N50L2 datasheet

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 ixtk62n25.pdf pdf_icon

IXTK60N50L2

IXTK 62N25 VDSS = 250 V High Current ID25 = 62 A MegaMOSTMFET RDS(on) = 35 m N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings TO-264 VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1.0 M 250 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) G ID25 TC = 25 C62 A D IDM TC = 25 C, pulse width... See More ⇒

Detailed specifications: IXTK250N10, IXTK32P60P, IXTK34N80, IXTK40P50P, IXTK46N50L, IXTK550N055T2, IXTK5N250, IXTK600N04T2, IRLB4132, IXTK62N25, IXTK75N30, IXTK80N25, IXTK82N25P, IXTK88N30P, IXTK8N150L, IXTK90N15, IXTK90N25L2

Keywords - IXTK60N50L2 MOSFET specs

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