All MOSFET. IXTK60N50L2 Datasheet

 

IXTK60N50L2 Datasheet and Replacement


   Type Designator: IXTK60N50L2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 960 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 980 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO264
 

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IXTK60N50L2 Datasheet (PDF)

 9.1. Size:583K  ixys
 ixtk62n25.pdf pdf_icon

IXTK60N50L2

IXTK 62N25 VDSS = 250 VHigh CurrentID25 = 62 AMegaMOSTMFETRDS(on) = 35 mN-Channel Enhancement ModePreliminary Data SheetSymbol Test conditions Maximum ratingsTO-264VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1.0 M 250 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)GID25 TC = 25C62 ADIDM TC = 25C, pulse width

Datasheet: IXTK250N10 , IXTK32P60P , IXTK34N80 , IXTK40P50P , IXTK46N50L , IXTK550N055T2 , IXTK5N250 , IXTK600N04T2 , IRLB4132 , IXTK62N25 , IXTK75N30 , IXTK80N25 , IXTK82N25P , IXTK88N30P , IXTK8N150L , IXTK90N15 , IXTK90N25L2 .

History: IXTK90N15 | IXTN600N04T2 | IXTN5N250 | IXTK200N10P | IXTK90N25L2

Keywords - IXTK60N50L2 MOSFET datasheet

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