All MOSFET. IXTK75N30 Datasheet

 

IXTK75N30 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTK75N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 540 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 240 nC
   trⓘ - Rise Time: 360 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO264

 IXTK75N30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTK75N30 Datasheet (PDF)

 9.1. Size:128K  ixys
 ixth68n20 ixtk74n20.pdf

IXTK75N30 IXTK75N30

VDSS ID25 RDS(on)High CurrentIXTK 74 N20 200 V 74 A 35 mWMegaMOSTMFETIXTH 68 N20 200 V 68 A 35 mWN-Channel Enhancement ModePreliminary dataSymbol Test conditions Maximum ratings TO-247AD (IXTH)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1.0 M 200 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 74N20 74 A68N20 68 A TO-264 AA (I

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