IXTK75N30 Datasheet. Specs and Replacement

Type Designator: IXTK75N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 540 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 360 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO264

IXTK75N30 substitution

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IXTK75N30 datasheet

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IXTK75N30

VDSS ID25 RDS(on) High Current IXTK 74 N20 200 V 74 A 35 mW MegaMOSTMFET IXTH 68 N20 200 V 68 A 35 mW N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings TO-247AD (IXTH) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1.0 M 200 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 74N20 74 A 68N20 68 A TO-264 AA (I... See More ⇒

Detailed specifications: IXTK34N80, IXTK40P50P, IXTK46N50L, IXTK550N055T2, IXTK5N250, IXTK600N04T2, IXTK60N50L2, IXTK62N25, K3569, IXTK80N25, IXTK82N25P, IXTK88N30P, IXTK8N150L, IXTK90N15, IXTK90N25L2, IXTK90P20P, IXTL2x180N10T

Keywords - IXTK75N30 MOSFET specs

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