IXTN40P50P Datasheet and Replacement

   Type Designator: IXTN40P50P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 477 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: SOT227
      - MOSFET Cross-Reference Search