All MOSFET. IXTN40P50P Datasheet

 

IXTN40P50P Datasheet and Replacement


   Type Designator: IXTN40P50P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 477 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: SOT227
 

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IXTN40P50P Datasheet (PDF)

 9.1. Size:85K  ixys
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IXTN40P50P

Preliminary Technical InformationIXTN46N50L VDSS = 500 VLinear Power MOSFETID25 = 46 AWith Extended FBSOAD RDS(on) 0.16 N-Channel Enhancement ModeGSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXTN)E153432VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VSGVGS Continuous 30 VVGSM

Datasheet: IXTN170P10P , IXTN17N120L , IXTN200N10L2 , IXTN200N10T , IXTN22N100L , IXTN30N100L , IXTN320N10T , IXTN32P60P , 10N65 , IXTN46N50L , IXTN550N055T2 , IXTN5N250 , IXTN600N04T2 , IXTN60N50L2 , IXTN62N50L , IXTN8N150L , IXTN90N25L2 .

History: AP2623GY

Keywords - IXTN40P50P MOSFET datasheet

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