All MOSFET. IXTN600N04T2 Datasheet

 

IXTN600N04T2 Datasheet and Replacement


   Type Designator: IXTN600N04T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 940 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 600 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00105 Ohm
   Package: SOT227
 

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IXTN600N04T2 Datasheet (PDF)

 9.1. Size:84K  ixys
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IXTN600N04T2

Preliminary Technical InformationIXTN62N50L VDSS = 500 VLinear Power MOSFETID25 = 62 AWith Extended FBSOAD RDS(on) 0.1 N-Channel Enhancement ModeGSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXTN)E153432VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VSGVGS Continuous 30 VVGSM

Datasheet: IXTN22N100L , IXTN30N100L , IXTN320N10T , IXTN32P60P , IXTN40P50P , IXTN46N50L , IXTN550N055T2 , IXTN5N250 , STP80NF70 , IXTN60N50L2 , IXTN62N50L , IXTN8N150L , IXTN90N25L2 , IXTN90P20P , IXTP01N100D , IXTP02N120P , IXTP02N50D .

History: JCS2N65C | SPD04N50C3 | IXTN60N50L2 | SWN2N65K | BUK9Y09-40B | AOL1436 | HM20N06

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