IXTN600N04T2 Datasheet. Specs and Replacement

Type Designator: IXTN600N04T2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 940 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 600 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00105 Ohm

Package: SOT227

IXTN600N04T2 substitution

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IXTN600N04T2 datasheet

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IXTN600N04T2

Preliminary Technical Information IXTN62N50L VDSS = 500 V Linear Power MOSFET ID25 = 62 A With Extended FBSOA D RDS(on) 0.1 N-Channel Enhancement Mode G S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXTN) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V S G VGS Continuous 30 V VGSM ... See More ⇒

Detailed specifications: IXTN22N100L, IXTN30N100L, IXTN320N10T, IXTN32P60P, IXTN40P50P, IXTN46N50L, IXTN550N055T2, IXTN5N250, 10N65, IXTN60N50L2, IXTN62N50L, IXTN8N150L, IXTN90N25L2, IXTN90P20P, IXTP01N100D, IXTP02N120P, IXTP02N50D

Keywords - IXTN600N04T2 MOSFET specs

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