All MOSFET. IXTN60N50L2 Datasheet

 

IXTN60N50L2 Datasheet and Replacement


   Type Designator: IXTN60N50L2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 735 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 53 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 980 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT227
 

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IXTN60N50L2 Datasheet (PDF)

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IXTN60N50L2

Preliminary Technical InformationIXTN62N50L VDSS = 500 VLinear Power MOSFETID25 = 62 AWith Extended FBSOAD RDS(on) 0.1 N-Channel Enhancement ModeGSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXTN)E153432VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VSGVGS Continuous 30 VVGSM

Datasheet: IXTN30N100L , IXTN320N10T , IXTN32P60P , IXTN40P50P , IXTN46N50L , IXTN550N055T2 , IXTN5N250 , IXTN600N04T2 , 13N50 , IXTN62N50L , IXTN8N150L , IXTN90N25L2 , IXTN90P20P , IXTP01N100D , IXTP02N120P , IXTP02N50D , IXTP05N100 .

History: SUM40N10-30 | SWN2N65K | AOL1436 | MTBA5N10J3 | BUK9Y09-40B | OSG65R140FSZF | HM20N06

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