All MOSFET. IXTN60N50L2 Datasheet

 

IXTN60N50L2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTN60N50L2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 735 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 610 nC
   trⓘ - Rise Time: 980 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT227

 IXTN60N50L2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTN60N50L2 Datasheet (PDF)

 9.1. Size:84K  ixys
 ixtn62n50l.pdf

IXTN60N50L2 IXTN60N50L2

Preliminary Technical InformationIXTN62N50L VDSS = 500 VLinear Power MOSFETID25 = 62 AWith Extended FBSOAD RDS(on) 0.1 N-Channel Enhancement ModeGSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXTN)E153432VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VSGVGS Continuous 30 VVGSM

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: GWM180-004X2-SL

 

 
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