All MOSFET. IXTN60N50L2 Datasheet

 

IXTN60N50L2 Datasheet and Replacement


   Type Designator: IXTN60N50L2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 735 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 610 nC
   trⓘ - Rise Time: 980 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT227
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IXTN60N50L2 Datasheet (PDF)

 9.1. Size:84K  ixys
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IXTN60N50L2

Preliminary Technical InformationIXTN62N50L VDSS = 500 VLinear Power MOSFETID25 = 62 AWith Extended FBSOAD RDS(on) 0.1 N-Channel Enhancement ModeGSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXTN)E153432VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VSGVGS Continuous 30 VVGSM

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

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