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IXTP182N055T Spec and Replacement


   Type Designator: IXTP182N055T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 182 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 70 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO220

 IXTP182N055T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTP182N055T Specs

 ..1. Size:221K  ixys
 ixta182n055t ixtp182n055t.pdf pdf_icon

IXTP182N055T

Preliminary Technical Information IXTA182N055T VDSS = 55 V TrenchMVTM IXTP182N055T ID25 = 182 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 T... See More ⇒

 8.1. Size:154K  ixys
 ixta180n10t ixtp180n10t.pdf pdf_icon

IXTP182N055T

IXTA180N10T VDSS = 100V TrenchMVTM IXTP180N10T ID25 = 180A Power MOSFET RDS(on) 6.4m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 175 C 100 V TO-220 (IXTP) VDGR TJ = 25 C to 175 C, RGS = 1M 100 V VGSM Transient 30 V ID25 TC = 25 C 180 A ILRMS Lead Cur... See More ⇒

 8.2. Size:108K  ixys
 ixta180n055t ixtp180n055t ixtq180n055t.pdf pdf_icon

IXTP182N055T

Advance Technical Information IXTQ 180N055T VDSS = 55 V Trench Gate IXTA 180N055T ID25 = 180 A Power MOSFET IXTP 180N055T RDS(on) = 4.0 m N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V D (TAB) S VGSM 20 V TO-220 (IXTP) ID25 TC = 25 C 180 A IDRM... See More ⇒

 8.3. Size:214K  ixys
 ixta180n085t ixtp180n085t.pdf pdf_icon

IXTP182N055T

Preliminary Technical Information IXTA180N085T VDSS = 85 V TrenchMVTM IXTP180N085T ID25 = 180 A Power MOSFET RDS(on) 5.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25 T... See More ⇒

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Detailed specifications: IXTP160N04T2 , IXTP160N075T , IXTP160N10T , IXTP16N50P , IXTP16N50PM , IXTP170N075T2 , IXTP180N085T , IXTP180N10T , IRF1404 , IXTP18N60PM , IXTP18P10T , IXTP1N100P , IXTP1N120P , IXTP1N80 , IXTP1N80P , IXTP1R4N100P , IXTP1R4N120P .

History: IPP110N20NA | MRF177M

Keywords - IXTP182N055T MOSFET specs

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