All MOSFET. IXTP3N110 Datasheet

 

IXTP3N110 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTP3N110

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 1100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 39 nC

Rise Time (tr): 700 nS

Maximum Drain-Source On-State Resistance (Rds): 4 Ohm

Package: TO220

IXTP3N110 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXTP3N110 Datasheet (PDF)

3.1. ixta3n120 ixtp3n120.pdf Size:562K _ixys

IXTP3N110 IXTP3N110

VDSS ID25 RDS(on) High Voltage IXTA 3N120 ? ? ? ? Power MOSFETs 1200 V 3 A 4.5 ? IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M? 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C3 A IDM TC = 25C, pulse width limi

4.1. ixtm3n80 ixtm3n80a ixtm3n90 ixtm3n90a ixtp3n80 ixtp3n80a ixtp3n90 ixtp3n90a.pdf Size:65K _ixys

IXTP3N110



4.2. ixta3n50p ixtp3n50p ixty3n50p.pdf Size:237K _ixys

IXTP3N110 IXTP3N110

IXTA 3N50P VDSS = 500 V PolarHVTM IXTP 3N50P ID25 = 3.6 A Power MOSFET ? ? IXTY 3N50P RDS(on) ? 2.0 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS 30 V VGSM 40 V (TAB) G D S ID25 TC = 25 C 3.6 A IDM TC = 25 C, pulse width limited

 4.3. ixta3n50d2-ixtp3n50d2.pdf Size:168K _ixys

IXTP3N110 IXTP3N110

Depletion Mode VDSX = 500V IXTA3N50D2 MOSFET ID(on) > 3A IXTP3N50D2 ? ? RDS(on) ? 1.5? ? ? ? ? ? ? N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings S VDSX TJ = 25C to 150C 500 V D (Tab) VGSX Continuous 20 V VGSM Transient 30 V TO-220AB (IXTP) PD TC = 25C 125 W TJ - 55 ... +150 C TJM 150 C Tstg - 55 ... +150 C G D D (Tab) S TL 1.6mm (0.062 in.)

4.4. ixta3n60p ixtp3n60p ixty3n60p.pdf Size:228K _ixys

IXTP3N110 IXTP3N110

IXTA 3N60P VDSS = 600 V PolarHVTM IXTP 3N60P ID25 = 3.0 A Power MOSFET IXTY 3N60P ? ? RDS(on) ? 2.9 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGS Continuous 30 V G S VGSM Transient 40 V (TAB) ID25 TC = 25 C 3.0 A TO-220 (IXTP)

Datasheet: IXTP300N04T2 , IXTP32N20T , IXTP32P05T , IXTP32P20T , IXTP36N30P , IXTP36P15P , IXTP3N100D2 , IXTP3N100P , IRF250 , IXTP3N120 , IXTP3N50D2 , IXTP3N50P , IXTP3N60P , IXTP42N15T , IXTP42N25P , IXTP44N10T , IXTP44P15T .

 
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