IXTP3N110 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTP3N110
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 1100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 39 nC
Rise Time (tr): 700 nS
Maximum Drain-Source On-State Resistance (Rds): 4 Ohm
Package: TO220
IXTP3N110 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTP3N110 Datasheet (PDF)
3.1. ixta3n120 ixtp3n120.pdf 
Size:562K _ixys
VDSS ID25 RDS(on) High Voltage IXTA 3N120 ? ? ? ? Power MOSFETs 1200 V 3 A 4.5 ? IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M? 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C3 A IDM TC = 25C, pulse width limi
4.1. ixta3n50d2-ixtp3n50d2.pdf Size:168K _ixys
Depletion Mode VDSX = 500V IXTA3N50D2 MOSFET ID(on) > 3A IXTP3N50D2 ? ? RDS(on) ? 1.5? ? ? ? ? ? ? N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings S VDSX TJ = 25C to 150C 500 V D (Tab) VGSX Continuous 20 V VGSM Transient 30 V TO-220AB (IXTP) PD TC = 25C 125 W TJ - 55 ... +150 C TJM 150 C Tstg - 55 ... +150 C G D D (Tab) S TL 1.6mm (0.062 in.)
4.2. ixta3n50p ixtp3n50p ixty3n50p.pdf Size:237K _ixys
IXTA 3N50P VDSS = 500 V PolarHVTM IXTP 3N50P ID25 = 3.6 A Power MOSFET ? ? IXTY 3N50P RDS(on) ? 2.0 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS 30 V VGSM 40 V (TAB) G D S ID25 TC = 25 C 3.6 A IDM TC = 25 C, pulse width limited
4.3. ixtm3n80 ixtm3n80a ixtm3n90 ixtm3n90a ixtp3n80 ixtp3n80a ixtp3n90 ixtp3n90a.pdf Size:65K _ixys
4.4. ixta3n60p ixtp3n60p ixty3n60p.pdf Size:228K _ixys
IXTA 3N60P VDSS = 600 V PolarHVTM IXTP 3N60P ID25 = 3.0 A Power MOSFET IXTY 3N60P ? ? RDS(on) ? 2.9 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGS Continuous 30 V G S VGSM Transient 40 V (TAB) ID25 TC = 25 C 3.0 A TO-220 (IXTP)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
