IXTP6N50P MOSFET Datasheet: N-Ch, 500V, 6A. Full specification with pinout and replacement list

IXTP6N50P Specs and Replacement

   Type Designator: IXTP6N50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 400 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220

IXTP6N50P substitution

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IXTP6N50P datasheet

..1. Size:229K ixys
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VDSS = 500 V IXTA 6N50P PolarHVTM ID25 = 6 A IXTP 6N50P Power MOSFET RDS(on) 1.1 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuous 30 V G S VGSM Transient 40 V (TAB) ID25 TC = 25 C6 A... See More ⇒

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Preliminary Technical Information Depletion Mode VDSX = 500V IXTA6N50D2 MOSFET ID(on) > 6A IXTP6N50D2 RDS(on) 500m IXTH6N50D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25 C 300 W G D D (Tab) TJ - 55 .... See More ⇒

8.1. Size:63K ixys
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Preliminary Technical Information Depletion Mode VDSX = 1000V IXTA6N100D2 MOSFET ID(on) > 6A IXTP6N100D2 RDS(on) 2.2 IXTH6N100D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25 C to 150 C 1000 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25 C 300 W G D D (Tab) TJ - ... See More ⇒

Detailed specifications: IXTP60N10T , IXTP60N10TM , IXTP60N20T , IXTP60N28TM-A , IXTP62N15P , IXTP64N055T , IXTP6N100D2 , IXTP6N50D2 , IRF830 , IXTP70N075T2 , IXTP70N085T , IXTP75N10P , IXTP76N075T , IXTP76N25T , IXTP76P10T , IXTP7N60P , IXTP7N60PM .