IXTP6N50P Datasheet. Specs and Replacement
Type Designator: IXTP6N50P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 400 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO220
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IXTP6N50P substitution
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IXTP6N50P datasheet
ixta6n50p ixtp6n50p.pdf
VDSS = 500 V IXTA 6N50P PolarHVTM ID25 = 6 A IXTP 6N50P Power MOSFET RDS(on) 1.1 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuous 30 V G S VGSM Transient 40 V (TAB) ID25 TC = 25 C6 A... See More ⇒
ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf
Preliminary Technical Information Depletion Mode VDSX = 500V IXTA6N50D2 MOSFET ID(on) > 6A IXTP6N50D2 RDS(on) 500m IXTH6N50D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25 C 300 W G D D (Tab) TJ - 55 .... See More ⇒
ixta6n100d2-ixtp6n100d2-ixth6n100d2.pdf
Preliminary Technical Information Depletion Mode VDSX = 1000V IXTA6N100D2 MOSFET ID(on) > 6A IXTP6N100D2 RDS(on) 2.2 IXTH6N100D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25 C to 150 C 1000 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25 C 300 W G D D (Tab) TJ - ... See More ⇒
Detailed specifications: IXTP60N10T, IXTP60N10TM, IXTP60N20T, IXTP60N28TM-A, IXTP62N15P, IXTP64N055T, IXTP6N100D2, IXTP6N50D2, FTP08N06A, IXTP70N075T2, IXTP70N085T, IXTP75N10P, IXTP76N075T, IXTP76N25T, IXTP76P10T, IXTP7N60P, IXTP7N60PM
Keywords - IXTP6N50P MOSFET specs
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