IXTP70N085T MOSFET Datasheet: N-Ch, 85V, 70A. Full specification with pinout and replacement list

IXTP70N085T Specs and Replacement

   Type Designator: IXTP70N085T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 90 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TO220

IXTP70N085T substitution

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IXTP70N085T datasheet

..1. Size:175K ixys
ixta70n085t ixtp70n085t.pdf pdf_icon

Preliminary Technical Information IXTA70N085T VDSS = 85 V TrenchMVTM IXTP70N085T ID25 = 70 A Power MOSFET RDS(on) 13.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C70 A... See More ⇒

6.1. Size:301K cn vbsemi
ixtp70n075t2.pdf pdf_icon

IXTP70N075T2 www.VBsemi.com N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0065at VGS = 10 V 80 80 0.0070at VGS = 6.0 V 75 17.1 nC APPLICATIONS 0.0085at VGS = 4.5 V 65 Primary Side Switching TO-220AB Synchronous Rectification D DC/AC Inverters LED Bac... See More ⇒

9.1. Size:252K ixys
ixta75n10p ixtp75n10p ixtq75n10p.pdf pdf_icon

IXTA 75N10P VDSS = 100 V PolarHTTM IXTP 75N10P ID25 = 75 A Power MOSFET IXTQ 75N10P RDS(on) 25 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 175 C 100 V (TAB) VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V TO-220 (IXTP) VGSM Transient ... See More ⇒

9.2. Size:177K ixys
ixta76n075t ixtp76n075t.pdf pdf_icon

Preliminary Technical Information IXTA76N075T VDSS = 75 V TrenchMVTM IXTP76N075T ID25 = 76 A Power MOSFET RDS(on) 12 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C76 A ... See More ⇒