3SK181-4 Datasheet and Replacement
Type Designator: 3SK181-4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V
|Id|ⓘ - Maximum Drain Current: 0.03 A
Tjⓘ - Maximum Junction Temperature: 125 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 55 Ohm
Package: SOT143
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3SK181-4 Datasheet (PDF)
3sk186.pdf
3SK186Silicon N-Channel Dual Gate MOS FETApplicationUHF TV tuner RF amplifierOutlineMPAK-42311. Source42. Gate13. Gate24. Drain3SK186Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 12 VGate 1 to source voltage VG1S 10 VGate 2 to source voltage VG2S 10 VDrain current ID 35 mAChannel power dissipation Pch 15
Datasheet: 3SK17 , 3SK171 , 3SK179 , 3SK180 , 3SK180-4 , 3SK180-5 , 3SK180-6 , 3SK181 , IRFB4227 , 3SK181-5 , 3SK181-6 , 3SK182 , 3SK186 , 3SK192P , 3SK192Q , 3SK193P , 3SK193Q .
Keywords - 3SK181-4 MOSFET datasheet
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History: TK2P60D | IRFBG20
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