IXTP90N055T Specs and Replacement

Type Designator: IXTP90N055T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 176 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: TO220

IXTP90N055T substitution

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IXTP90N055T datasheet

 ..1. Size:215K  ixys
 ixta90n055t ixtp90n055t.pdf pdf_icon

IXTP90N055T

Preliminary Technical Information IXTA90N055T VDSS = 55 V TrenchMVTM IXTP90N055T ID25 = 90 A Power MOSFET RDS(on) 8.8 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 TC =... See More ⇒

 9.1. Size:302K  cn vbsemi
 ixtp98n075t.pdf pdf_icon

IXTP90N055T

IXTP98N075T www.VBsemi.com N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0065at VGS = 10 V 80 80 0.0070at VGS = 6.0 V 75 17.1 nC APPLICATIONS 0.0085at VGS = 4.5 V 65 Primary Side Switching TO-220AB Synchronous Rectification D DC/AC Inverters LED Back... See More ⇒

Detailed specifications: IXTP7N60P, IXTP7N60PM, IXTP80N10T, IXTP80N12T2, IXTP86N20T, IXTP88N085T, IXTP8N50P, IXTP8N50PM, IRFZ44N, IXTP90N055T2, IXTP90N075T2, IXTP90N15T, IXTP96P085T, IXTP98N075T, IXTQ100N25P, IXTQ102N15T, IXTQ102N20T

Keywords - IXTP90N055T MOSFET specs

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